NVMFS5C670NLWFAFT1G Discrete Semiconductor Products

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The NVMFS5C670NLWFAFT1G is a single N-channel enhancement mode MOSFET designed for analog and digital applications. It is a device typically used to control high current, high speed switching over a wide range of power, from low to high, and even to ultra- high frequencies. It is also ideally suited for analog and digital switching, such as voltage regulators, power controllers, low distortion amplifiers, PWM and Class D amplifiers, and differential amplifiers.

The NVMFS5C670NLWFAFT1G is made with advanced trench technology, providing extremely low dynamic resistance. It is constructed from 13 metal layers of silicon dioxide, with reduced overall design complexity. This advanced MOSFET provides superior dynamic performance compared to the competition in terms of on-state resistance, gate charge, and switching characteristics. With an extremely low on-state resistance of only 0.5 ohms, and a fast body diode recovery time, this device provides excellent dynamic characteristics and power management.

The NVMFS5C670NLWFAFT1G has a breakdown voltage of 20V, which makes it capable of driving very large currents. With additional features such as a logic compatible gate and built in latch-up protection, this device is an ideal choice for high frequency applications, ranging from high power DC-DC switching, to high speed logic interface, and driving high current loads.

The working principle of the NVMFS5C670NLWFAFT1G is based on the operation of a MOSFET. The device is constructed from two transistors connected in a “T” configuration, and the drain, source and gate are used to determine the operation of the device. In its basic form, the gate terminal is connected to a logic signal, and upon the logic signal flipping (from high to low, or vice-versa) the device will both turn on or off, respectively. Additionally, when the gate is connected to a voltage source such as a battery, the voltage will determine whether the device is on or off, with higher voltage turning it on and lower voltage turning it off.

In addition to the gate and source/drain terminals, the NVMFS5C670NLWFAFT1G also has an internal body diode which is automatically activated when the source is lower than the drain. This diode prevents reverse current flow and helps to protect the device. In addition, the device also features a latch-up protection circuit which prevents the device from being over-driven or damaged from power related issues.

The NVMFS5C670NLWFAFT1G is a reliable and efficient way of controlling high current and high speed switching, and is ideal for use in a variety of applications, including voltage regulators, power controllers, low distortion amplifiers, PWM and Class D amplifiers, differential amplifiers and logic interface. With its high current driving capability, fast body diode recovery time, and low on-state resistance, the device provides superior dynamic performance compared to the competition.

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