NVMFS5C673NLWFT1G

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The NVMFS5C673NLWFT1G is a high-performance, single-channel, non-volatile MOSFET (NVMFET). It is built using an advanced process that delivers improved reliability, performance and power savings, making it an excellent solution for a wide range of applications.

The NVMFS5C673NLWFT1G integrates a non-volatile memory cell with a power MOSFET gate, allowing it to be used as a switch between two or more power sources. The device is capable of switching between analog and digital signals, as well as between high and low signal levels. It can be used as a low-voltage signal switch, or as a high-voltage, high-current switch.

The NVMFS5C673NLWFT1G provides an integrated circuit (I/O) for protection, allowing for high current/high voltage operation without damage to the device. It also features adjustable drain-to-source breakdown voltage (VDSS), allowing for the function to be configured to meet the requirements of the application. The device is also equipped with an on-chip temperature sensor, allowing for its operation to be monitored.

The NVMFS5C673NLWFT1G is a low-power, single-channel MOSFET with on-chip non-volatile memory. This makes it ideal for applications where low power consumption and long-term data retention are desired, such as medical and automotive electronics.

The NVMFS5C673NLWFT1G is used in a wide variety of applications, including motor control, power switching, lighting, solenoid actuation, vehicle access control, motor encoders and power supply regulation. Its low-power, single-channel switching makes it an ideal choice for low-voltage and low-power applications. The NVMFS5C673NLWFT1G is also commonly used for controlling secondary and tertiary loads in motor control applications.

The working principle of the NVMFS5C673NLWFT1G is based on its non-volatile memory and field-effect transistor (MOSFET) gate structure. The non-volatile memory cell stores the current configuration of the device and allows it to retain the configuration even in the case of an unexpected power interruption. The output of the NVMFS5C673NLWFT1G is based on the logic level at the MOSFET gate, which is determined by the logic level applied to the non-volatile memory cell. When the gate voltage is high, the MOSFET conductivity is increased, allowing current to flow through it. Conversely, when the gate voltage is low, the MOSFET conductivity is decreased, reducing or blocking the flow of current.

The NVMFS5C673NLWFT1G is an ideal device for low-power applications, providing reliable and efficient switching for a variety of applications. The combination of on-chip memory, adjustable VDSS and on-chip temperature monitoring makes the NVMFS5C673NLWFT1G an excellent solution for a wide range of applications, from motor control and power switching to lighting, vehicle access control, motor encoders, and power supply regulation.

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