Allicdata Part #: | NVMFS5C682NLT1G-ND |
Manufacturer Part#: |
NVMFS5C682NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V SO8FL |
More Detail: | N-Channel 60V 3.5W (Ta), 28W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C682NLT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 2V @ 16µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
Description
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NVMFS5C682NLT1G is a dual-series low-impedance N-Channel enhancement mode Mosfet from ON Semiconductor with 11V Dual Hex Source-Drain Voltage, 23µA Gate-Source Cutoff Voltage, and 200µA Gate-Source Leakage Current. This small-signal MOSFET is specially designed for applications with small form factors such as cellular phones, PDAs and various battery-operated or power-sensitive portable computers.NVMFS5C682NLT1G operates in depletion mode and is characterized by a fast switching time. Its on-state resistance is small compared to the off-state resistance, resulting in very low power consumption and a reduced drive voltage requirement. Additionally, it offers higher reliability, improved thermal design and greater immunity to moise and enhanced ESD protection compared to conventional MOSFETs. Its on-state transistor gate voltage is between 1.2 V and 9 V, gate-source capacitance is 3.2 pF and gate-drain capacitance is 0.1 pF.The main application field of NVMFS5C682NLT1G is biasing, amplification and switching circuits in portable electronic equipment, such as for battery-powered portable instruments, cellular phone, PDAs and other small-signal and RF circuits, providing a high impedance, low leakage current and low voltage drop.NVMFS5C682NLT1G is a voltage controlled MOSFET that can be used to switch gated signals when the input control voltage is applied. A MOSFET consists of four areas of conducting material - the source, drain, body and gate. When the gate voltage of a MOSFET is zero, there is no current flow between the source and drain. When a positive voltage is applied to the gate, a current can flow from source to drain and the transistor is said to be in its on state.The gate controls the channel of the MOSFET in the same way as a diode controls current flow in a resistor. When the input is low, the gate voltage is low and the transistor is in a non-conducting state. When the input voltage is above threshold, the gate voltage is above the threshold voltage and the transistor is in conducting state.NVMFS5C682NLT1G features reduced on-state resistance, allowing for a high switching speed and low quiescent current. It also features extremely low gate charge, enabling very low power losses. Additionally, it features a low gate capacitance and an enhanced robustness against EMI/ESD. The gate voltage-source voltage characteristics are linear and have a low gate drive requirement. This device also exhibits low Rdson, allowing for higher current ratings with lower power losses.The NVMFS5C682NLT1G series is highly suitable for portable electronics, automotive applications and various other low-voltage gate drive circuits. It is also extremely energy efficient, making it an ideal choice for modern applications that demand high efficiency and low power consumption. All in all, NVMFS5C682NLT1G series is an advanced, low-impedance, fast switching, efficient and high-reliability MOSFET appropriate for battery operated portable devices, automobiles, digital audio-visual equipment and various other low-voltage applications. It offers reliable on-state switching and features reduced power consumption, low gate charge and low quiescent current. With its enhanced robustness against EMI/ESD, it provides exceptional noise immunity and improved thermal design, providing a highly reliable and efficient device for extreme environments.The specific data is subject to PDF, and the above content is for reference
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