NVMFS5C682NLWFT1G

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NVMFS5C682NLWFT1G is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from ON Semiconductor. It is used in different applications and is a single device for voltage, current, and power control. If you need to control current flow or transfer signals in different environments, the NVMFS5C682NLWFT1G is ideal.

The NVMFS5C682NLWFT1G has a drain-source voltage rating of 45 V and a 0.620 ohm maximum rated drain current of 42 A. This is a N-channel MOSFET, meaning that current flows from the drain to the source when the gate-source voltage is above the threshold value. This NVMFS5C682NLWFT1G also has a maximum drain-source On-state resistance of 0.09 Ohm and a maximum gate source voltage of 20 V. In addition, it has an improved dynamic body diode reverse recovery characteristics. The Total Gate Charge is 11.4 nC.

The NVMFS5C682NLWFT1G is typically used in motor control and actuator drive applications as well as to control power distribution and in power supply designs. With respect to distributed logic, it provides efficient control of power MOSFETs, improves power utilization, and increases system efficiency. It is designed to provide fast switching speed, low gate charge, and improved dynamic body diode characteristics. The NVMFS5C682NLWFT1G also offers better switching overvoltage performance for higher reliability.

In its most basic form, a MOSFET acts as an electronically operated switch. A voltage applied to its Gate (G) terminal changes the electrical conductivity between its Source (S) and Drain (D) terminals. In a depletion mode MOSFET such as the NVMFS5C682NLWFT1G, the resistance between its Source and Drain terminals is high when the Gate terminal is left floating or at zero volts, and significantly lowered as the Gate voltage is increased.

When a voltage is applied to the Gate, electron flow is restricted to between the Gates, which pulls the source voltage (VGS) down to the equal to the voltage applied to the Gate. This is known as saturation. When the voltage applied to the Gate is then removed, the electrons are (mostly) no longer flowing and the resistance between Source and Drain increases. This is known as cut-off.

The NVMFS5C682NLWFT1G is also designed to provide low drain-source On-state resistance and enhanced switching performance. The On-state resistance is an important parameter, as it indicates the amount of power the transistor can handle when conducting current from the drain to the source. The Gate-source voltage is also important, as it sets the maximum voltage the transistor can handle in saturation. The gate charge describes the charge that needs to be applied to the gate in order for the transistor to turn on. The Total gate charge for this transistor is 11.4 nC, which is relatively low compared to other similar devices.

The body diode of the NVMFS5C682NLWFT1G provides protection by clamping the drain-source voltage in the event of excessive current flow. The built-in body diode also improves the overall system efficiency by allowing faster switching of the load. The diode has a reverse recovery time of 13 ns, which is less than half that of other similar devices. The improved dynamic body diode characteristics provide improved robustness and better system performance.

The NVMFS5C682NLWFT1G is ideal for motor control, actuator drives, distributed logic, power distribution and power supply designs. Its improved dynamic body diode characteristics and low On-state resistance make it a great choice for these applications. It is also an excellent choice for high reliability operations that require improved overvoltage protection.

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