NVMFS6B03NLT3G

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The NVMFS6B03NLT3G is a member of Fairchild Semiconductor\'s FETs, a family of transistors with precise field-effect control. It is a single, lowest on resistance MOSFET device, making it ideal for operations that require low power control. The device has an on-chip diode structure, which provides a standard gate threshold voltage and simplifies the control circuit design.

The NVMFS6B03NLT3G is suitable for a variety of control applications, from power inverters and motors, to switching power supplies, point-of-load converters, and battery chargers. The device can also be used for frequency conversion power supply applications, such as AC-DC, DC-AC, and AC-AC transformer applications. It is especially useful for supporting low-power control circuits in these applications.

The device is an enhancement-mode metal-oxide semiconductor (MOSFET) with a metal gate electrode with an internal diode structure. The gate-source voltage is determined by an on-chip diode, which makes it suitable for linear operations. The device can operate in both enhancement and depletion modes. The built-in diode ensures a standard gate threshold voltage, eliminating the need for an external circuit to adjust the threshold. This simplifies the control circuit design.

The NVMFS6B03NLT3G has a low on-resistance rating of 200 mΩ at a gate voltage of 4V. This makes it suitable for low power applications as it allows for efficient current flow with minimal power losses. The device also features avalanche ratings of 176A/158A. Its energy efficiency makes it suitable for a wide range of applications, including renewable energy applications.

The NVMFS6B03NLT3G operates using a drain-source voltage range from 0V to 100V, with a drain-source current rating of 4A. Its reverse body diode capability is popular in applications such as AC and DC rectifiers as it eliminates the need for an external diode. The device also has a fast switching speed of 20 nanoseconds, making it ideal for fast power switching applications such as field-effect transistors (FETs).

The NVMFS6B03NLT3G has a wide operating temperature range of -55 to +175°C, and is available in a variety of package styles, including surface-mount and dual-in-line packages. It is RoHS and REACH compliant, making it suitable for a wide range of environmental applications. The device also has a built-in ESD protection diode, which provides reliable protection against electrostatic discharge.

The NVMFS6B03NLT3G is an ideal choice for applications that require fast and efficient low power control. Its low on-resistance rating and built-in ESD protection make it suitable for a wide range of operations, including renewable energy applications. The device\'s fast switching speed, wide operating temperature range and wide range of package styles make it a versatile and reliable choice.

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