Allicdata Part #: | NVMFS6B05NLT1G-ND |
Manufacturer Part#: |
NVMFS6B05NLT1G |
Price: | $ 1.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 17A 5DFN |
More Detail: | N-Channel 100V 3.8W (Ta), 165W (Tc) Surface Mount... |
DataSheet: | NVMFS6B05NLT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.47652 |
Input Capacitance (Ciss) (Max) @ Vds: | 3980pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 165W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 10V |
Vgs (Max): | ±16V |
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The NVMFS6B05NLT1G is a type of Single Field-Effect Transistor (FET) widely used in many applications. This device consists of a JFET, MosFET, and an integrated charge pump, all of which are designed to control the voltage across the drain and source of a transistor. It is widely used in electronic control and circuit protection for a variety of industrial and consumer products.
The NVMFS6B05NLT1G works on the principle of two types of voltage controlled current sources (VCCSs): the JFET and MOSFET. The JFET is essentially a resistor in series with the drain and source of the transistor, while the MOSFET is essentially a high bandwidth voltage source/load. The integrated charge pump is used to control the voltage across the drain and source of the transistor. This allows the user to control the current flowing through the device and thereby the amount of power it generates.
The NVMFS6B05NLT1G can be used for a wide range of applications, including power management in consumer electronics, communication systems, digital logic, and other industrial control systems. In consumer electronics, it is used to control the power supply of various components within a device. In communication systems, it is used to provide high speed data communication. In industrial control systems, it is used as a load or voltage source to power various components. It can also be used as a switch or current limiter in applications that require fine control of current or voltage.
The NVMFS6B05NLT1G is a single-channel FET device which offers a high-frequency, stable operation with excellent temperature stability over a wide range of temperatures. It has an excellent response time, low power dissipation, and high-current capacity, making it an ideal choice for applications requiring precise control of currents and voltages. Moreover, due to its small size, it is also suitable for applications where space and size are a consideration.
The NVMFS6B05NLT1G is an ideal choice for applications requiring precise control of current, as it is able to adjust the voltage and current with minimal distortion. This device is also highly efficient, and it requires minimal power to operate. Additionally, the device features a low-impedance junction which helps to reduce power loss and increase the reliability of the device.
Overall, the NVMFS6B05NLT1G is a reliable and powerful transistor with a range of applications. It is often used in power management, communications systems, digital logic, and industrial control systems. Its precise control of currents and voltages, combined with its low power dissipation and high current capacity, make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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