NVMFS6B14NLT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFS6B14NLT1GOSTR-ND |
Manufacturer Part#: |
NVMFS6B14NLT1G |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 11A DFN5 |
More Detail: | N-Channel 100V 11A (Ta), 55A (Tc) 3.8W (Ta), 94W (... |
DataSheet: | NVMFS6B14NLT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.42799 |
3000 +: | $ 0.39946 |
7500 +: | $ 0.37949 |
10500 +: | $ 0.36522 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 4.5V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 55A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A NVMFS6B14NLT1G Transistor is a form of Field Effect Transistor (FET). It is a single, unipolar transistor device that is used for switching and amplifying electronic signals. It works by using an electrical field to forward bias the aspect of the device, controlling the amount of current flowing through the device. This equipment is an optimal choice for use in power management systems and power amplifiers.
The NVMFS6B14NLT1G utilizes two terminals, a source and a drain. The source terminal is used to apply a voltage to the transistor, while the drain terminal receives current after it has passed through the transistor. A gate terminal, which is insulated from the source and drain, is used to control the amount of current which passes through. When voltage is applied to the gate terminal, it creates an electrical field which attracts charge carriers (electrons or holes), thus forming a conductive path for current to flow through.
Applications for the NVMFS6B14NLT1G can include power management and amplification, such as in radio frequency (RF) circuits and low noise amplifier (LNA) circuits. Because it operates at low voltages, it can also be used in circuits which require a low power supply, such as small microelectronic equipment. It is also used in motor drivers and in other circuits requiring precision current flow control.
In addition to its general uses, the NVMFS6B14NLT1G is also highly useful as a switching device in many digital logic circuits. Its low voltage and low voltage drop characteristics make it an ideal choice when control accuracy and speed of switching is paramount. NVMFS6B14NLT1G transistors can also be used in safety related applications, such as in circuit breakers and fuses, due to their high breakdown voltage and low on-state resistance.
The NVMFS6B14NLT1G works by using an electrical field to forward bias. This is created by applying a voltage to the gate terminal, which then attracts charge carriers and forms a conductive path. The NVMFS6B14NLT1G produces a very low voltage drop and on-state resistance, making it a great choice for applications where precision control and low power consumption is needed. Moreover, its low cost and high reliability makes it an optimal choice for a vast range of digital logic and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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