Allicdata Part #: | NVMFS6B25NLWFT1G-ND |
Manufacturer Part#: |
NVMFS6B25NLWFT1G |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 8A 33A 5DFN |
More Detail: | N-Channel 100V 8A (Ta), 33A (Ta) 3.6W (Ta), 62W (T... |
DataSheet: | NVMFS6B25NLWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.40166 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 62W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 905pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 13.5nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 33A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NVMFS6B25NLWFT1G is a 25-volt, N-channel, enhancement mode power MOSFET. It is typically used with low-voltage power supplies and signal control applications, including battery-powered connections, logic-level signal control, linear regulation, and AC/DC amplifier circuits. This device has an especially attractive cost-performance balance that makes it an ideal choice for many different types of applications.
The NVMFS6B25NLWFT1G has a low on-state resistance (RDS(on)) of 0.040 Ω, and a high switching speed, making it suitable for power switching applications.The device can handle up to 30A of continuous current, with a peak maximum current of up to 50A. For applications requiring fast switching speeds, the NVMFS6B25NLWFT1G can be used with a raised gate drive voltage, allowing for faster edge rates and improved load turn-on time.
This MOSFET utilizes a unique N-channel enhancement mode (EMOS) structure. This structure provides excellent switching performance and fast switching speeds, while also providing extremely low on-resistance. Additionally, the NVMFS6B25NLWFT1G has self-protected against over-current and over-temperature conditions.
The NVMFS6B25NLWFT1G is a fully-integrated device, meaning that it requires no external components for operation. It is designed to be operated in the forward direction only, and is not recommended for use in reverse polarity applications. All electrical parameters require a single gate drive of 10V or less.
The NVMFS6B25NLWFT1G is designed to be used in a wide variety of applications including distributing power from DC and AC sources, DC-DC converter switching, logic level signal control, lighting controls, automotive and telecom applications, and more.
The NVMFS6B25NLWFT1G is a cost-effective device that is well-suited for many applications in need of high efficiency and controllability. Its low on-state resistance and fast switching performance make it an attractive option for many applications, and its integration of self-protection also adds to its suitability in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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