NVMFS6B75NLT3G

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.5W (Ta), 56W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	740pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	11.3nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	30 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7A (Ta), 28A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVMFS6B75NLT3G Application Field and Working Principle

Single-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) are among the most widely used transistors due to their low power dissipation and high switching speeds. The NVMFS6B75NLT3G is an example of a single-gate MOSFET, which is designed for use in applications requiring high-speed switching and low-power dissipation.

Operating Principles

MOSFETs consist of two regions of "dual-gate" material, a source region and a drain region, separated by an oxide layer, which acts as an insulator. When a voltage is applied to the gate terminal, a channel of electrons is created between the source and drain. This is known as the "channel region" and is responsible for the operation of the MOSFET.The NVMFS6B75NLT3G is a single-gate MOSFET, which means that it only has one gate terminal, rather than two. This gate terminal is used to control the flow of electrons between the source and drain regions. When a voltage is applied to the gate terminal, a channel of electrons is created between the source and drain regions. This channel of electrons is controlled by the gate voltage and is responsible for the functioning of the MOSFET.The NVMFS6B75NLT3G MOSFET is designed for use in high-speed switching applications, such as switching power supplies, computers and other high-speed devices. The transistor operates at a maximum frequency of 1.5GHz and a maximum switching frequency of 500MHz. The NVMFS6B75NLT3G has an on-resistance of 0.060 ohms and an off-resistance of 16.0 ohms, which is suitable for applications that require low-voltage operation and low power dissipation. The transistor also has a maximum drain-source breakdown voltage of 55 volts and a maximum drain-source breakdown current of 4 amps.

Applications

The NVMFS6B75NLT3G is designed mainly for use in switching power supplies, computers and high-speed devices such as game consoles. Its low on-resistance and high switching frequency make it suitable for use in these applications.It can also be used in applications such as communication systems, motor controllers and other devices that require robust switching capabilities and low power dissipation. The transistor can handle up to 55 volts and 4 amps, which makes it suitable for many applications.The NVMFS6B75NLT3G is also suitable for use in automotive applications, such as motor control systems and braking systems. Its low on-resistance and high switching frequency make it ideal for use in these applications.In summary, the NVMFS6B75NLT3G is a single-gate MOSFET that is designed for use in applications requiring high-speed switching and low-power dissipation. It has a maximum frequency of 1.5GHz, a maximum switching frequency of 500MHz, an on-resistance of 0.060 ohms and an off-resistance of 16.0 ohms. The transistor is suitable for use in high-speed switching applications such as switching power supplies, computers, communication systems and motor controllers. It can also be used in automotive applications such as motor control systems and braking systems.

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