Allicdata Part #: | NVMFS6B75NLWFT3G-ND |
Manufacturer Part#: |
NVMFS6B75NLWFT3G |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 7A 28A 5DFN |
More Detail: | N-Channel 100V 7A (Ta), 28A (Tc) 3.5W (Ta), 56W (T... |
DataSheet: | NVMFS6B75NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.30103 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta), 28A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS6B75NLWFT3G is a type of field-effect transistor (FET), more specifically a metal-oxide semiconductor field-effect transistor (MOSFET). A MOSFET is a type of FET that is fabricated by depositing layers of silicon dioxide and a thin gate conductor onto a silicon substrate. The gate conductor can be made of polysilicon, aluminum, polycide or some other material. The device also consists of a source, a drain and a gate.
MOSFETs are used in a variety of applications including power electronics, radio frequency (RF) power amplifiers, and digital logic circuits. In power electronics, MOSFETs are used as switching devices for voltage regulation, power conditioning, and power conversion. They can be used in place of the traditional bipolar junction transistors. In RF power amplifiers, MOSFETs are used to amplify and switch high frequency signals. In digital logic circuits, MOSFETs are used to switch signals by propagating a single state throughout a large number of transistors, resulting in high-speed operation.
NVMFS6B75NLWFT3G transistors are a subcategory of MOSFETs and are specifically designed for high-current switching applications. These transistors are fabricated using advanced technology and feature superior electrical performance compared to other types of MOSFETs. The main features of NVMFS6B75NLWFT3G transistors include a low threshold voltage, a low on-state resistance and high frequency switching capabilities. They also have a very low gate capacitance and are highly process-tolerant.
The working principle of NVMFS6B75NLWFT3G transistors is the same as for other MOSFETs. When a voltage is applied to the gate, the transistor is activated and a current flows from the source to the drain. This current is determined by the resistance between the source and the drain, which is called the on-state resistance. When the voltage is removed the transistor turns off and no current flows.
NVMFS6B75NLWFT3G transistors are ideal for high-current switching applications due to their low on-state resistance, low gate capacitance and high frequency switching capability. They are used in many applications such as motor control, power supply circuits and switching power amplifiers. They are also used as switches in LED lighting applications.
In conclusion, NVMFS6B75NLWFT3G transistors are a type of MOSFETs specifically designed for high-current switching applications. They feature superior electrical performance due to their low threshold voltage, low on-state resistance and high frequency switching capability. The working principle of the NVMFS6B75NLWFT3G transistors is the same as for other MOSFETs and they are used in a variety of applications such as motor control, power supply circuits, switching power amplifiers, and LED lighting applications.
The specific data is subject to PDF, and the above content is for reference
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