Allicdata Part #: | SI4501ADY-T1-E3TR-ND |
Manufacturer Part#: |
SI4501ADY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 30V/8V 8SOIC |
More Detail: | Mosfet Array N and P-Channel, Common Drain 30V, 8V... |
DataSheet: | SI4501ADY-T1-E3 Datasheet/PDF |
Quantity: | 1012 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel, Common Drain |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A, 4.1A |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 8.8A, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4501 |
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The SI4501ADY-T1-E3 is an array of Transistors - FETs, MOSFETs (Field Effect Transistors, Metal-Oxide Semiconductor FETs). The SI4501ADY-T1-E3 is an integrated circuit that contains four N-channel enhancement-mode MOSFETs in a TSSOP package. The MOSFETs are rated at 45V, each with a low on-resistance Ron of 2.5 ohms when the device is connected to the gate voltage is 3V at a channel current of 1A. It is designed to handle a wide range of applications, including high-frequency power supply design, power management and automotive lighting systems.
The SI4501ADY-T1-E3 uses an array of power MOSFETs to create a switch. In this application, the main function of the MOSFET device is to act as an “instant on” switch. This can be used to switch on and off a circuit quickly and reliably, making it ideal for power supply design, power management and automotive lighting systems. The device has an extremely low on-resistance of 2.5ohms, allowing it to handle large currents efficiently with minimal losses.
The device works on the principle of control over the flow of electrons. The SI4501ADY-T1-E3 has four N-channel enhancement-mode MOSFETs that are connected in an array. These MOSFETs are connected in an “ON” configuration where the drain and the source are tied together. The main purpose of this array is to create a connection between the source and the drain, which allows the current to flow from source to drain without the need for a path from the gate voltage.
The key feature of the SI4501ADY-T1-E3 is its low on-resistance Ron. This low resistance allows the device to handle large currents with minimal losses. It is also designed to withstand high temperatures up to 150 degrees Celsius, which makes it suitable for extreme applications. The device is also able to tolerate a voltage of up to 45V and operates at a frequency of up to 1MHz.
The SI4501ADY-T1-E3 array can be used in wide range of applications, including power supply design, power management, automotive lighting systems and general purpose logic circuits. It is extremely useful in controlling the current flow in a circuit while providing excellent performance. With its low on-resistance Ron and its ability to withstand high temperatures, the SI4501ADY-T1-E3 is a highly reliable device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI4500BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8S... |
SI4501ADY-T1-E3 | Vishay Silic... | -- | 1012 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4511DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4563DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4561DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4532ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4539ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4532ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4505DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4505DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4500BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8-... |
SI4501ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4511DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4563DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
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SI4542DY | ON Semicondu... | 0.5 $ | 1000 | MOSFET N/P-CH 30V 6A 8SOI... |
SI4501BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8SOI... |
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