SI4539ADY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4539ADY-T1-E3TR-ND

Manufacturer Part#:

SI4539ADY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 30V 4.4A 8-SOIC
More Detail: Mosfet Array N and P-Channel 30V 4.4A, 3.7A 1.1W S...
DataSheet: SI4539ADY-T1-E3 datasheetSI4539ADY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4539
Description

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The SI4539ADY-T1-E3 is a very powerful and versatile array of FETs (Field Effect Transistors). It is designed for applications in advanced switching and control systems, enabling a wide range of applications. This array consists of both MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) and N-channel FETs (Field Effect Transistors). Each of these transistors has a specified drain-source voltage rating that is suitable for a variety of applications. This allows them to be used in different situations and at different power levels, making it a very useful and flexible device.

The working principle of the SI4539ADY-T1-E3 is the same as with any other FET in that it uses a voltage applied to the gate to control the flow of current between the drain and the source. This is known as the Gate Threshold Voltage, or GTV. When a voltage is applied to the gate, it creates an electric field that increases the resistance between the drain and source, thus controlling the flow of current between the two. The amount of voltage required to cause conduction will depend on the GTV of the FET, and this GTV can be adjusted for different applications.

The application field of the SI4539ADY-T1-E3 is quite wide and varied. It can be used for a variety of applications, including power supplies, amplifiers, and digital switching and control systems. It can also be used in a variety of environments, from industrial to military, providing an extremely versatile device. In addition, its compatibility with many circuit design packages makes it ideal for prototyping and development, allowing designers to quickly test and modify their designs.

The SI4539ADY-T1-E3 is an excellent choice for those looking for a reliable and efficient FET array. Its versatile design and wide application field make it a versatile choice for many different applications and designs. With its wide range of application fields, its adjustable GTV, and its compatibility with many circuit design packages, the SI4539ADY-T1-E3 provides designers with an efficient and reliable solution for a wide range of switching and control applications.

The specific data is subject to PDF, and the above content is for reference

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