Allicdata Part #: | SI4532ADY-T1-E3TR-ND |
Manufacturer Part#: |
SI4532ADY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 30V 3.7A 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 3.7A, 3A 1.13W, 1... |
DataSheet: | SI4532ADY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A, 3A |
Rds On (Max) @ Id, Vgs: | 53 mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.13W, 1.2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4532 |
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The SI4532ADY-T1-E3 is an array transistor referred to as an FET (Field Effect Transistor). The SI4532ADY-T1-E3 is a lateral double diffused enhancement-mode MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). It is constructed from five densely packed MOSFETs, each of which having its own gate, drain, and source terminals. The SI4532ADY-T1-E3 has a maximum breakdown voltage of 40V and a maximum operating temperature of 175°C.
The SI4532ADY-T1-E3 is a versatile and efficient device, making it suitable for a variety of applications. It is often used in power switching applications, such as motor control, power switching, and power management. It can also be used in analog applications, such as audio amplifiers, voltage regulators, and switched-mode power supplies. Its power density, low thermal resistance, and low gate charge make it ideal for use in consumer electronics such as portable devices, computers, and gaming systems.
The working principle of the SI4532ADY-T1-E3 is based on the concept of the metal-oxide semiconductor effect. When the gate terminal of the device is connected to the source, the current flow between the source and the drain is blocked. This is known as the \'off\' state of the transistor. On the other hand, when the gate terminal is supplied with a positive voltage, the current flow between the source and the drain is allowed. This is referred to as the \'on\' state of the device.
The SI4532ADY-T1-E3 provides a low on-resistance and a low on-capacitance in order to minimize switching losses. It also has a low threshold voltage and an asymmetric conduction characteristics which results in lower switching noise. The SI4532ADY-T1-E3 also has an integrated level shifter, which is useful in digital switching applications.
The SI4532ADY-T1-E3 is a reliable and efficient power management solution for a variety of applications. Its low on-resistance, low gate charge, and wide operating temperature range make it suitable for use in consumer electronics and automotive systems. It is also an ideal choice for use in motor control, power switching, and voltage regulation applications.
The specific data is subject to PDF, and the above content is for reference
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