SI4563DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4563DY-T1-E3TR-ND

Manufacturer Part#:

SI4563DY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 40V 8A 8-SOIC
More Detail: Mosfet Array N and P-Channel 40V 8A 3.25W Surface ...
DataSheet: SI4563DY-T1-E3 datasheetSI4563DY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4563
Description

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Modern transistors come in a vast array of shapes and sizes, but one particular type that has proved to be particularly useful is the SI4563DY-T1-E3. It is a surface mount device that is part of a wider family of components, the FETs (Field Effect Transistors) and MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors).

SI4563DY-T1-E3 components are specially designed for power factor correction (PFC). PFC is a method used to either reduce or eliminate the harmonic current components which are typically seen in industrial and commercial electrical systems. The SI4563DY-T1-E3 is designed as an integrated circuit, or IC. It contains two transistors, but unlike your standard bipolar transistors, these are arranged in an array configuration.

The SI4563DY-T1-E3 contains two separate power MOSFET cells. Each cell contains two P-Channel MOSFETs, which are arranged in parallel, making the total output of the device greater than if the individual devices were used separately. Each MOSFET cell also has a control section, which detects any drop in current and causes the two cells to automatically shut off in case of overload.

The great thing about the SI4563DY-T1-E3 is that it can be used in a variety of applications. It is commonly used in switched mode power supplies, as well as high power PFC applications. It can even be used to build circuits used for motor control and complex 3-phase motor control. It can be used for anything from high power, low noise power supplies to more complex multi-phase motor control.

The way the SI4563DY-T1-E3 works is quite simple. The two MOSFETs are connected in parallel, allowing them to share the same current. This allows the device to handle higher current loads than if two individual transistors were used. When current is detected to be dropping, the two cells automatically shut off, protecting the device from being overloaded.

The main attraction of the SI4563DY-T1-E3 is that it is both efficient and powerful. It is able to reduce harmonic currents by up to 50%, which can help to protect sensitive equipment. It is also highly reliable, which makes it an ideal choice for high power applications, such as motor control and PFC.

In conclusion, the SI4563DY-T1-E3 is a powerful and reliable device which can be used for a wide range of applications. It is part of a larger class of FETs and MOSFETs, and its array configuration allows it to handle higher current loads than traditional bipolar transistors. Its ability to reduce harmonic currents, combined with its compact size and high reliability make it an ideal choice for industrial and commercial applications.

The specific data is subject to PDF, and the above content is for reference

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