Allicdata Part #: | SI4590DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4590DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P CHAN 100V SO8 DUAL |
More Detail: | Mosfet Array N and P-Channel 100V 3.4A, 2.8A 2.4W,... |
DataSheet: | SI4590DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A, 2.8A |
Rds On (Max) @ Id, Vgs: | 57 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 50V |
Power - Max: | 2.4W, 3.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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Transistors - FETs, MOSFETs - Arrays
The SI4590DY-T1-GE3 is a three-field programmable dual N-channelmosfet array. It is mainly used for driving solenoids, motors and other high-current load applications. This mosfet array features three independent output channels, each of which is adjustable in current, rate, and time in increments of 1 mA. It operates at a voltage of 45V and a maximum on-state current of 1.6A.
Application Field
The SI4590DY-T1-GE3 is designed primarily for automotive switchmode power converters. It is suitable for driving any high-current load, such as motors, solenoids, relays, and lamps. Its three independent output channels allow for a variety of applications and can be used to drive a wide variety of loads.
Working Principle
The SI4590DY-T1-GE3 consists of three individual N-Channel Mosfet arrays, each of which are configured to deliver up to 1.6A of ON-state current. The device has built-in thermal protection and has a nominal operating voltage of 45V. The device can be programmed by setting the current values of the three outputs independently and in increments of 1 milliamp.
Each N-Channel Mosfet array is configured to provide high-four-sided dv/dt protection, which increases the reliability of the device in high-frequency applications. The on-state resistance of the three outputs is also maintained low, reducing power losses.
The SI4590DY-T1-GE3 is designed to be an efficient and reliable solution for driving high-power current loads in automotive applications. The device can be programmed to deliver currents of up to 1.6A, with adjustable time intervals and the ability to adjust currents. Furthermore, the device has built-in thermal protection which makes it a reliable and safe solution.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4500BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8S... |
SI4501ADY-T1-E3 | Vishay Silic... | -- | 1012 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4511DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4563DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4561DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4532ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4539ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4532ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4505DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4505DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4500BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8-... |
SI4501ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4511DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4563DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4559ADY-T1-E3 | Vishay Silic... | -- | 35000 | MOSFET N/P-CH 60V 5.3A 8-... |
SI4559ADY-T1-GE3 | Vishay Silic... | -- | 42500 | MOSFET N/P-CH 60V 5.3A 8-... |
SI4564DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 10A 8SO... |
SI4542DY | ON Semicondu... | 0.5 $ | 1000 | MOSFET N/P-CH 30V 6A 8SOI... |
SI4501BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4532DY | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 30V 3.9A/3.... |
SI4599DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8S... |
SI4532CDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 6A 8-SO... |
SI4554DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8SOM... |
SI4590DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P CHAN 100V SO8 ... |
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