SI4501ADY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4501ADY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4501ADY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 30V/8V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel, Common Drain 30V, 8V... |
DataSheet: | SI4501ADY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel, Common Drain |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A, 4.1A |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 8.8A, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4501 |
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The SI4501ADY-T1-GE3 is an enhancement mode n-channel logic level field-effect transistor (FET) array, designed as an adjustable-voltage logic-level driver and amplifier. It is fabricated using advanced technologies and is distinguished by its very low RDS(on), low gate charge and fast switching characteristics, making it a good choice for a range of applications in a variety of equipment, including power supplies, motor control systems and automotive circuits. In addition, its low-power consumption, low-voltage operation and small package size make it ideal for use in portable devices.
The SI4501ADY-T1-GE3 consists of an array of sixteen n-channel FETs, each with a built-in gate-voltage adjuster that can be set to an adjustable value. The adjustable gate voltage provides an adjustable threshold voltage, allowing the FETs to be operated at low levels, making them suitable for low voltages and power applications. The array also has a power ESD protection diode, and a built-in bias circuit, which provides a fixed-value drive voltage to the logic level FETs.
The FET array is operated by applying a voltage to its gate terminal, which causes the internal bias to shift. This change in the internal bias causes a decrease of the FET\'s threshold value, allowing it to turn on easily. The gate-voltage adjuster ensures that the FETs can be adjusted to their optimum performance level. The adjustable voltage also ensures that the FETs are capable of acting as parasitic-resistant level shifters, allowing them to operate in high-speed circuits, as well as digital circuits.
The SI4501ADY-T1-GE3 is an effective device for applications where a low RDS(on), low gate charge and fast switching capability are important. It is suitable for motor control, automotive and power supply applications, as well as a variety of portable and fixed equipment. Its versatility and ease of use make it a popular choice for many circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI4500BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8S... |
SI4501ADY-T1-E3 | Vishay Silic... | -- | 1012 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4511DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4563DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4561DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4532ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4539ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4532ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4505DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4505DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4500BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8-... |
SI4501ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4511DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4563DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4559ADY-T1-E3 | Vishay Silic... | -- | 35000 | MOSFET N/P-CH 60V 5.3A 8-... |
SI4559ADY-T1-GE3 | Vishay Silic... | -- | 42500 | MOSFET N/P-CH 60V 5.3A 8-... |
SI4564DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 10A 8SO... |
SI4542DY | ON Semicondu... | 0.5 $ | 1000 | MOSFET N/P-CH 30V 6A 8SOI... |
SI4501BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4532DY | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 30V 3.9A/3.... |
SI4599DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8S... |
SI4532CDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 6A 8-SO... |
SI4554DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8SOM... |
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