SI4561DY-T1-GE3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	6.8A, 7.2A
Rds On (Max) @ Id, Vgs:	35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	640pF @ 20V
Power - Max:	3W, 3.3W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Base Part Number:	SI4561

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The SI4561DY-T1-GE3 is a type of transistor array called a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a type of transistor designed for higher voltage and power applications. MOSFETs are the most commonly used transistor in digital electronic circuits and are used to switch electronic signals and provide power to a wide range of products from personal electronics to industrial equipment.The SI4561DY-T1-GE3 is designed for use in a wide range of applications, including linear and logic circuits, power supplies, and in motor controllers. It is a versatile active component that is used to control the current flow within a circuit. It offers high-temperature performance and operates in higher-voltage power supplies.The SI4561DY-T1-GE3 is a p-channel enhancement mode MOSFET array. It is composed of four individual transistors in a single package which can be used in parallel or in series configurations. The device is rated for a maximum drain-source voltage of 45V and a maximum drain current of 18A. It is suitable for both low and high voltage applications, allowing it to be used in various consumer and industrial applications.The transistor array features an ESD protection of greater than 2000V for gate-source and gate-drain. It also has a low RDS on voltage of 0.36V and an integrated protection Zener diode for gate protection from overvoltage conditions.The SI4561DY-T1-GE3 is designed to enable circuits to switch rapidly without causing excessive heating. The combination of the MOSFET transistors and integrated protection features ensures that the circuits can operate reliably at a high level of efficiency. The array also features a fast switching speed, making it suitable for high frequency switching applications.The SI4561DY-T1-GE3 can be used in a variety of configurations, including high and low side switches, level shifting circuits, single or multiple switches, and power supplies. It is an ideal choice for use in high voltage and power supply designs, and also offers excellent temperature stability and thermal management. The device is capable of operating over an extended temperature range of -55°C to +175°C.In conclusion, the SI4561DY-T1-GE3 is a type of MOSFET transistor array with a wide range of applications. It features ESD protection, a low RDS on voltage, and integrated protection features for gate protection from overvoltage conditions. The combination of the MOSFET transistors and integrated protection features ensures that this device can operate reliably at a high level of efficiency and is suitable for high frequency switching applications.

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