SI4569DY-T1-E3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N and P-Channel
FET Feature:	Standard
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	7.6A, 7.9A
Rds On (Max) @ Id, Vgs:	27 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	855pF @ 20V
Power - Max:	3.1W, 3.2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Base Part Number:	SI4569

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI4569DY-T1-E3 Application Field and Working Principle

The Silicon Labs SI4569DY-T1-E3 is a high-frequency power MOSFET array. It is comprised of integrated analog and digital blocks, making it suitable for a variety of purposes and applications. The device utilizes gate-source control circuitry to form a depletion-mode field-effect transistor array, allowing for a high degree of linearity and power efficiency.

Application Field

The SI4569DY-T1-E3 is suitable for use in a variety of power conversion and switching applications. It is well-suited for portable devices, battery-powered applications, and applications where low power dissipation is needed. It is frequently employed for low-noise amplifier and audio amplifier circuits, as well as for radio frequency (RF) applications. Additionally, it is suitable for use in pulse wave modulators, frequency synthesizer functions, and regulated power supplies.

Working Principle

The SI4569DY-T1-E3 is comprised of a series of depletion-mode field-effect transistors known as MOSFETs. The MOSFET is a four-terminal device that primarily functions as a voltage-controlled switch; it has lower voltage requirements and is highly efficient in power consumption. To explain how the SI4569DY-T1-E3 works, we can look at it within the context of a simple audio amplifier circuit. The circuit consists of an amplifier, a power supply, and a MOSFET array, like the SI4569DY-T1-E3. In this circuit, the power supply provides voltage to the amplifier, which then amplifies the small input signal into a higher-amplitude output signal.The MOSFET array helps the amplifier in switching the power supply’s voltage on and off, depending on the needs of the amplifier. The MOSFETs connected to the amplifier’s output act as switches and are connected in series to the power supply. When the amplifier wants to generate a higher amplitude output signal, the gate-source voltage of each MOSFET increases. This increases the voltage at the output of the amplifier, switching it on and off as required. When a greater voltage is needed at the output, more power is (therefore) supplied to the amplifier, allowing it to achieve greater output ampitude. Using a MOSFET array such as the SI4569DY-T1-E3 helps to keep the circuit power efficient and minimize power dissipation, improving its capabilities as a voltage-controlled switch.

Conclusion

The SI4569DY-T1-E3 is an ideal MOSFET array for a wide range of low power-dissipation applications. It utilizes a series of depletion-mode field-effect transistors, which can be used as switches in power conversion and amplification circuits. With its low power dissipation requirements, it is suitable for use in portable and battery-powered devices, as well as for radio frequency applications. Additionally, its linearity and power efficiency make it suitable for use in regulated power supplies and frequency synthesizers.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description