Allicdata Part #: | SI4563DY-T1-GE3-ND |
Manufacturer Part#: |
SI4563DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 40V 8A 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 40V 8A 3.25W Surface ... |
DataSheet: | SI4563DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2390pF @ 20V |
Power - Max: | 3.25W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4563 |
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The SI4563DY-T1-GE3 is a very special transistor which is designed to fit in an array package. This type of transistor is commonly referred to in the industry as a “FET array” or “MOSFET array”. It is a type of field-effect transistor or FET and is a type of metal-oxide semiconductor (MOS) transistor. This type of transistor is often used in many different applications, including microprocessors, for assembling various circuits and for extension in various fields of electronics.
The array package of the SI4563DY-T1-GE3 consists of up to 3 separate transistors. That is, the 3 transistors have been mounted together in a single package for easier wiring. This makes the transistor array much easier to connect, as only one pin is required for the entire package.
The most common use for an array package like the SI4563DY-T1-GE3 is to help create and control power switching applications. Such transistor arrays are often used to control the flow of electrical power to a single device, or multiple devices. This is usually done by connecting and disconnecting the devices in a rapid, controlled manner. All of this is controlled by varying the resistance, capacitance and gate voltage of the array.
The main idea behind electrical power switching is to be able to regulate the voltage and current flowing into a device. This is done by connecting and disconnecting the device quickly, in a predictable and reliable manner. By varying the resistance, capacitance and gate voltage of the transistor array, you can more precisely control the flow of electricity to the device.
The SI4563DY-T1-GE3 can also be used for signal amplification and signal shaping as well. By using the transistor array properly, it is possible to create very complex and precisely shaped waveforms, as well as amplify the signal and increase its power. This is very useful for complex signal processing applications.
The SI4563DY-T1-GE3 and other transistor arrays have become very popular in a wide variety of applications because they can provide a great degree of control and precision over the power and signal routing. The array package is also very easy to use and requires minimal connections. This makes it a great choice for controlling electrical power and signal routing in any situation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI4500BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8S... |
SI4501ADY-T1-E3 | Vishay Silic... | -- | 1012 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4511DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4563DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4561DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4532ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4539ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4532ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4505DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4505DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4500BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8-... |
SI4501ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4511DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4563DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
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SI4542DY | ON Semicondu... | 0.5 $ | 1000 | MOSFET N/P-CH 30V 6A 8SOI... |
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SI4532DY | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 30V 3.9A/3.... |
SI4599DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8S... |
SI4532CDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 6A 8-SO... |
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