Allicdata Part #: | SI4569DY-T1-GE3-ND |
Manufacturer Part#: |
SI4569DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 40V 7.6A 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 40V 7.6A, 7.9A 3.1W, ... |
DataSheet: | SI4569DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A, 7.9A |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 855pF @ 20V |
Power - Max: | 3.1W, 3.2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4569 |
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SI4569DY-T1-GE3 is one of the most versatile and reliable power FETs, or field effect transistors, on the market today. It was designed for a wide range of applications, from industrial to automotive and medical treatments. These FETs provide a high degree of efficiency, reliability and performance, enabling organizations to meet the demands of their most challenging projects.
A FET is a type of transistor that is made up of an array of different electronic components. It works by connecting an independent source of current, typically a battery or an electrical source, to the device with the potential of the FET attached. The FET then allows a higher power level for the device via the current supplied by the source.
The SI4569DY-T1-GE3 can be used in a variety of applications such as motor control, switching and protection circuits. It also has a wide operating temperature range, making it suitable for a variety of conditions. This FET also features a low startup current, low on resistance, fast switching time and low leakage current, making it suitable for various types of power FET applications.
When used in a motor control circuit, the SI4569DY-T1-GE3 FET enables high-current applications with its low on resistance, fast switching time, and low leakage current. It is able to control the motor speed by controlling the current supplied to the motor, enabling accurate and efficient control over the motor. It is also suitable for applications such as motor protection circuits and switching circuits, where fast switching time, low leakage current and low on resistance are all essential for a successful application.
The SI4569DY-T1-GE3 also has a variety of safety features that makes it suitable for medical applications. It has advanced ESD (electrostatic discharge) protection, which prevents the transient current from disturbing sensitive medical equipment. It also has advanced thermal protection, which prevents the device from becoming too hot and damaging other sensitive components.
The SI4569DY-T1-GE3 is capable of operating at a wide range of temperatures, ranging from -55 degrees Celsius to +250 degrees Celsius. This ability to withstand extreme temperatures makes it suitable for a variety of industrial and automotive applications as well. The device also features a low startup current, making it an energy efficient solution.
The SI4569DY-T1-GE3 is an ideal choice for a wide range of applications, such as industrial control systems, automotive applications, medical treatment equipment applications, and various other power FET applications. This FET offers a high degree of efficiency, reliability and performance, helping organizations meet the most demanding of their projects.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI4500BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8S... |
SI4501ADY-T1-E3 | Vishay Silic... | -- | 1012 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4511DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4563DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4561DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4532ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
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SI4542DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4532ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4505DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
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SI4500BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8-... |
SI4501ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4511DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4563DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
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