SI4511DY-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The Si4511DY-T1-E3 is a dual N-channel depletion-mode MOSFET array integrated circuit (IC) intended for use in general purpose analogue and digital circuit applications. Ideally suited for high current switching applications, these MOSFETs provide high input resistance and low on-resistance (R_on) for the highest performance in MOSFET technology.

The Si4511DY-T1-E3 is a monolithic MOSFET array IC designed specifically for high operating temperature, high speed, and low on-resistance. It consists of two independent N-channel enhancement-mode transistors and two independent N-channel depletion-mode transistors, all of which share a common chip substrate. The integrated circuit can operate over a supply voltage range of 2V to 18V.

The Si4511DY-T1-E3 has five pins – Gate 1, Gate 2, Drain 1, Drain 2, and Source. The combined Gate pins allow for dual control of both transistors, while the Drain and Source pins are dedicated to each individual transistor. The Gate voltages for the two transistors can be independently controlled. This allows for a variety of applications, such as load switching, level shifting, and speed control.

The Si4511DY-T1-E3 has an R_on of only 0.5 Ohm, making it well suited for high-temperature and high-speed applications. It is also able to withstand up to 20-amps of current, making it an ideal choice for applications which require reliable power switching. With its low on-resistance, the Si4511DY-T1-E3 is able to reduce the power loss associated with power switching. This in turn helps to reduce the overall power consumption of the system and increase efficiency.

Applications for the Si4511DY-T1-E3 include high-power motor controls, power switching, DC-DC converters, motor drivers, level shifters, relay drivers, and switching power supplies. The Si4511DY-T1-E3 is also ideal for automotive, industrial, audio, and telecommunications applications. The Si4511DY-T1-E3 is designed with a low on-resistance, high input impedance, and high surge capability, making it suitable for a variety of switching and level-shifting applications.

The Si4511DY-T1-E3 is also designed to be vibration resistant and has a high tolerance for transients. It has an operating range of -55°C to 150°C, making it well suited for automotive and industrial applications. It is also available in a “hardslew” package capable of handling up to 75-amps of current, making it suitable for the most demanding motor control applications.

In conclusion, the Si4511DY-T1-E3 is an ideal solution for a wide range of power switching and level shifting applications. Its low on-resistance, high input impedance, and high surge capability make it well suited for high-power motor control, power switching, DC-DC converters, motor drivers, level shifters, relay drivers, and switching power supplies. Additionally, its ability to withstand vibration and transients, as well as its extended temperature range, make it a highly reliable device for automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference