SI4559ADY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4559ADY-T1-E3TR-ND

Manufacturer Part#:

SI4559ADY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
More Detail: Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, ...
DataSheet: SI4559ADY-T1-E3 datasheetSI4559ADY-T1-E3 Datasheet/PDF
Quantity: 35000
Stock 35000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 3.1W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4559
Description

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The SI4559ADY-T1-E3 is a high-current, low-voltage, low-power analog switch array designed for DC and AC signal routing, signal gating and multiplexing applications in consumer and computing applications. It features low on resistance, low leakage current and high isolation voltage for superior signal integrity. The SI4559ADY-T1-E3 is a three-channel, single-ended CMOS device. It is available in a SOIC-8 package.

The SI4559ADY-T1-E3 CMOS switch array is designed to be compatible with low-voltage logic (Vcc of 3.3V, 1.8V and 0.9V) and provide low on-resistance in the 50Ω - 430Ω range. It is designed to switch large signal currents up to 500mA without the need for an additional power supply. In addition, the device has an exceptionally low power consumption of only 3uA typical and is highly reliable.

The SI4559ADY-T1-E3 is a three-channel analog switch array that can be used for switching multiple small or large signals from one point to another. It is ideal for DC/AC signal routing, signal gating and multiplexing, switching transmission lines, and controlling loads. The device has three independent analog switches, which can be connected for single- or dual-pole operation. It also features an on-chip shunt regulator, which helps minimize switching noise when the device is connected to a common power source.

The working principle of the SI4559ADY-T1-E3 is based on the principle of Field Effect Transistors (FETs). FETs are active devices that control the flow of current between two nodes. They are made up of two sizes of transistor, a source and a drain, which are separated by a semiconductor layer known as the channel. As the voltage on the gate electrode of the FET is changed, the current between the source and drain is controlled. The SI4559ADY-T1-E3 uses FETs to switch between two signal paths when a logic signal is applied to the input. It can also be used as an electronic switch to control the flow of current from its output to a load.

The SI4559ADY-T1-E3 is an ideal solution for consumer and computing applications, due to its low voltage, low power consumption and high reliability. It is also suitable for various signal routing and switching applications, due to its high on-resistance and low leakage current. With its large signal current capability, it is suitable for large signal applications as well. Lastly, its shunt regulator ensures no switching noise when connected to a common power source.

The specific data is subject to PDF, and the above content is for reference

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