Allicdata Part #: | SI4559ADY-T1-E3TR-ND |
Manufacturer Part#: |
SI4559ADY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 60V 5.3A 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, ... |
DataSheet: | SI4559ADY-T1-E3 Datasheet/PDF |
Quantity: | 35000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A, 3.9A |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 665pF @ 15V |
Power - Max: | 3.1W, 3.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4559 |
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The SI4559ADY-T1-E3 is a high-current, low-voltage, low-power analog switch array designed for DC and AC signal routing, signal gating and multiplexing applications in consumer and computing applications. It features low on resistance, low leakage current and high isolation voltage for superior signal integrity. The SI4559ADY-T1-E3 is a three-channel, single-ended CMOS device. It is available in a SOIC-8 package.
The SI4559ADY-T1-E3 CMOS switch array is designed to be compatible with low-voltage logic (Vcc of 3.3V, 1.8V and 0.9V) and provide low on-resistance in the 50Ω - 430Ω range. It is designed to switch large signal currents up to 500mA without the need for an additional power supply. In addition, the device has an exceptionally low power consumption of only 3uA typical and is highly reliable.
The SI4559ADY-T1-E3 is a three-channel analog switch array that can be used for switching multiple small or large signals from one point to another. It is ideal for DC/AC signal routing, signal gating and multiplexing, switching transmission lines, and controlling loads. The device has three independent analog switches, which can be connected for single- or dual-pole operation. It also features an on-chip shunt regulator, which helps minimize switching noise when the device is connected to a common power source.
The working principle of the SI4559ADY-T1-E3 is based on the principle of Field Effect Transistors (FETs). FETs are active devices that control the flow of current between two nodes. They are made up of two sizes of transistor, a source and a drain, which are separated by a semiconductor layer known as the channel. As the voltage on the gate electrode of the FET is changed, the current between the source and drain is controlled. The SI4559ADY-T1-E3 uses FETs to switch between two signal paths when a logic signal is applied to the input. It can also be used as an electronic switch to control the flow of current from its output to a load.
The SI4559ADY-T1-E3 is an ideal solution for consumer and computing applications, due to its low voltage, low power consumption and high reliability. It is also suitable for various signal routing and switching applications, due to its high on-resistance and low leakage current. With its large signal current capability, it is suitable for large signal applications as well. Lastly, its shunt regulator ensures no switching noise when connected to a common power source.
The specific data is subject to PDF, and the above content is for reference
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SI4500BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8S... |
SI4501ADY-T1-E3 | Vishay Silic... | -- | 1012 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4511DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4563DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4561DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4532ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4539ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4532ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4505DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
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SI4500BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8-... |
SI4501ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4511DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
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SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4563DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
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