Allicdata Part #: | SI4511DY-T1-GE3CT-ND |
Manufacturer Part#: |
SI4511DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V 7.2A 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 20V 7.2A, 4.6A 1.1W S... |
DataSheet: | SI4511DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4511 |
Series: | TrenchFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A, 4.6A |
Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 9.6A, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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Transistors are important components in electronics. They are used to amplify signals, provide switching capabilities and are also used in variety of other applications. SI4511DY-T1-GE3 is a type of transistor array. Transistor arrays are collection of transistors that can be used for various functions in a circuit. They are sometimes referred to as “integrated packages” because multiple components are integrated into a single package. In this article, we will discuss the application field and working principle of the SI4511DY-T1-GE3 transistor array.
The SI4511DY-T1-GE3 is an N-channel powerFET array which can be used for various switching and power applications. It consists of three N-Channels with Low-Threshold (LT) gates. This makes it suitable for use in low voltage applications, as well as in higher voltage applications providing up to 70V drain to source voltage. Another notable feature of the SI4511DY-T1-GE3 is its low gate charge. Its gate charge is only 19pC at a drain-source voltage of 12V, which is significantly lower than most other powerFETs.
The SI4511DY-T1-GE3 can be used in a variety of applications. It is commonly used in automotive applications, such as switching power and on-board sensors, as well as in industrial applications, like motor controllers and high power DC to DC power supplies. Other applications include lighting and power management in various consumer products. The low gate charge and low gate voltage threshold makes it suitable for use in low power and battery powered applications.
The working principle of the SI4511DY-T1-GE3 is similar to other N-channel MOSFETs. When a voltage is applied to the gate, a channel forms in the substrate material and carriers are attracted to the channel. This allows current to flow from source to drain, thereby allowing power to be switched. The main difference between the SI4511DY-T1-GE3 and other powerFETs is its low gate charge. This means that it requires less energy to switch the transistor, making it more efficient and power-saving.
To conclude, the SI4511DY-T1-GE3 is a type of transistor array that is used in many applications ranging from automotive to industrial. Its low gate charge and low gate voltage threshold make it suitable for use in low power and battery powered applications. By understanding the application field and working principle of the SI4511DY-T1-GE3, its users can utilize it to its full potential.
The specific data is subject to PDF, and the above content is for reference
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SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
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SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
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SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
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