SI4542DY

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Standard
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	6A
Rds On (Max) @ Id, Vgs:	28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	830pF @ 15V
Power - Max:	1W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Base Part Number:	SI4542D

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Introduction

The SI4542DY is a two-pole N-channel MOSFET array designed as an ideal replacement for commonly used discrete MOSFET devices in both digital and analog applications. It is a compact and space-saving solution which provides significant improvements in performance and reliability. This article will provide an overview of the SI4542DY application field and working principle.

Application Field

The SI4542DY MOSFET array can be used in a variety of applications, including power switching, motor control, and RF power amplifiers. Its low on-resistance and fast switching times make it ideal for high-speed digital and analog power switching. In addition, its integrated thermal protection circuit helps to improve reliability and reduce the need for external components.The SI4542DY is available in both SOIC-8 and DIP-16 packages, offering flexibility for various system designs. With its integrated ESD protection up to ± 8kV, the SI4542DY is well-suited for use in a wide variety of industrial, consumer, and automotive applications.

Working Principle

The SI4542DY MOSFET array consists of two N-channel MOSFETs that are connected in series in a DIP-16 package. Each MOSFET has its own gate and source terminals, and is connected to the common source. Both MOSFETs can conduct current in opposite directions, which offers flexibility in switched-mode power supply designs.In order to turn the SI4542DY MOSFET array on or off, the gate electrodes of both MOSFETs must be driven with a common gate signal. When the gate signal is high, both MOSFETs are turned on, providing a low-impedance path between the source and drain terminals. When the gate signal is low, both MOSFETs are turned off, and the array provides an open-circuit between the source and drain terminals.The thermal protection circuit of the SI4542DY is designed to reduce the risk of device failure due to excessive temperatures. This circuit monitors the temperature of both MOSFETs, and will automatically turn off the power supply if it senses a temperature greater than a predetermined limit.

Conclusion

The SI4542DY is an ideal solution for incorporating high-speed and reliable power switching into a variety of applications. With its two N-channel MOSFETs, integrated thermal protection circuit, and integrated ESD protection up to ± 8kV, the SI4542DY provides a high-performance and robust power switching solution.

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