SI4565ADY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4565ADY-T1-E3TR-ND

Manufacturer Part#:

SI4565ADY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 40V 6.6A 8-SOIC
More Detail: Mosfet Array N and P-Channel 40V 6.6A, 5.6A 3.1W S...
DataSheet: SI4565ADY-T1-E3 datasheetSI4565ADY-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4565
Description

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The SI4565ADY-T1-E3 is an Low Voltage High Current MOSFET Array designed for the application fields of lighting, motor control and automotive. The product is a cost-effective semiconductor that offers excellent performance, low power consumption and good system reliability. It features a multi-channel array of four N-channel enhancement type MOSFETs as well as an ESD protection diode integrated into the package.

The MOSFETs featured in this array have a maximum drain current rating of 12A and a maximum drain-source voltage rating of 60V. The on-resistance is extremely low and the switching speed is high. This makes the product suitable for both DC (such as solar cell) and AC applications, such as motor control. The package is very compact and has low power consumption. The ESD protection diode reduces the susceptibility to transients and improves the system\'s immunity against ESD effects.

The SI4565ADY-T1-E3 is a perfect choice for applications that require low voltage and high current MOSFET arrays, such as lighting, motor control, automotive, and HVAC applications. The built in ESD protection diode provides additional protection against voltage spikes and transients due to high frequency switching. The package also has a low-profile design, which makes it easier to install in a variety of places.

The operation of the SI4565ADY-T1-E3 is based on the principle of conducting electrons through a semiconductor material. The four N-channel MOSFETs featured in this array are structured with a source and a drain. When a voltage is applied to the source and drain, electrons are forced to flow through the MOSFET channel. This creates a current flow between the source and the drain and a resistance that can be adjusted by adjusting the voltage. The ESD protection diode also featured in this array protects the system from voltage spikes and transients due to high frequency switching. The low power consumption makes the SI4565ADY-T1-E3 extremely suitable for a variety of applications.

In conclusion, the SI4565ADY-T1-E3 is a very powerful and cost-effective solution for low voltage and high current MOSFET arrays. Its built-in ESD protection diode and low power consumption are perfect for applications such as lighting, motor control and automotive. Additionally, the low profile design makes it easier to install. The SI4565ADY-T1-E3 is a great choice for achieving excellent performance and reliability in various applications.

The specific data is subject to PDF, and the above content is for reference

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