SI4559ADY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4559ADY-T1-GE3TR-ND

Manufacturer Part#:

SI4559ADY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
More Detail: Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, ...
DataSheet: SI4559ADY-T1-GE3 datasheetSI4559ADY-T1-GE3 Datasheet/PDF
Quantity: 42500
Stock 42500Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 3.1W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4559
Description

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The SI4559ADY-T1-GE3 is a static logic device consisting of four enhancement-mode N-channel MOSFETs arranged in a quad array. It’s an ideal solution for designers of high-speed, low-power, and versatile gate-drivers, as it is specially designed to meet the consumer-grade power supply applications. In the recent years, this device has become increasingly popular because of its exceptional characteristics in terms of robustness, switching speed, and consistently low power consumption.

The SI4559ADY-T1-GE3 occupies a 19-pin DIP (Dual Inline Package) design that makes it suitable for single-layer or double-layer printed-circuit board layout, and offers versatility for applications such as DC and AC circuit design. It offers a set of four identical N-channel MOSFETs along with fourenable inputs, which ensures stability in various operating conditions. This device is powered by a 20V voltage source and offers an extremely wide range of operating temperatures, between -55 to +125°C.

Due to its high performance and robust design, the SI4559ADY-T1-GE3 is used in a wide variety of applications, ranging from high-performance power systems to consumer-grade electricity management. It is often used as a switch in industrial and telecommunication systems, power amplifiers, motor controllers, as well as to control the flow of energy in switching systems.

The SI4559ADY-T1-GE3 is designed to reduce switching losses and conserve energy. It operates in a switched-mode principle, in which high-speed MOSFETs are used to switch the power from the input to the output. The device quickly switches between the two states, which reduces power losses and improves power efficiency.

The SI4559ADY-T1-GE3 is designed with a proprietary logic control circuit to control the gate drivers of MOSFETs. This circuit enables the device to operate in a wide range of switching frequencies, allowing designers to select the best settings for their application. It also features an advanced protection feature, which prevents overloading and helps protect against voltage spikes.

The SI4559ADY-T1-GE3 is also equipped with a variety of additional features, such as over-temperature and over-voltage protection, thermal shutdown, and independent enable/disable inputs. These features make it a robust and reliable device that can operate reliably in all operating conditions.

In conclusion, the SI4559ADY-T1-GE3 is an ideal MOSFET array for consumer-grade power supply applications. It is designed to meet a wide range of applications, from power amplifiers to motor controllers, and is extremely durable and reliable. With its wide operating temperature range and advanced protection features, it offers both robustness and power efficiency for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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