SI4505DY-T1-GE3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V, 8V
Current - Continuous Drain (Id) @ 25°C:	6A, 3.8A
Rds On (Max) @ Id, Vgs:	18 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:	1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	1.2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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SI4505DY-T1-GE3 is a low voltage dual N-channel MOSFET designed for general purpose switching applications. It is designed to provide low on-resistance and high-current capabilities while maintaining ease of use and flexibility. The SI4505DY-T1-GE3 is designed to operate in a wide variety of voltage, current, and temperature ranges. The device has an on-resistance of 0.11 Ohm, an off-resistance of 20 Ohm, and a maximum current rating of 11 Amps.TheSI4505DY-T1-GE3 is part of a family of low voltage transistors which includes NPN, PNP, and Lateral MOSFETs. The MOSFETs are well suited for general purpose switching applications and are configurable for use in either simple or complex circuits.MOSFETs employ the principles of field-effect transistors (FETs) where the conducting channel between the source and drain terminals is controlled by the gate voltage. As the gate voltage increases, the channel connection between the source and drain terminals is enhanced, leading to an increase in conduction. The strength of the channel connection continues to increase until the gate voltage reaches its maximum. A decrease in the gate voltage will have the effect of decreasing the channel connection between the source and drain terminals, resulting in a decrease in conduction.The SI4505DY-T1-GE3 is well suited for use in general purpose switching applications and is ideal for use when power efficiency is of the utmost importance. It is also useful in applications requiring fast switching due to its low on-resistance and fast switching times. Applications include power switching, power regulation, and inductive loads.The SI4505DY-T1-GE3 has been designed to be compatible with a variety of logic families, including CMOS and TTL. It has been optimized for use in SCSI and I2C applications where speed is critical. The low on-resistance of the device allows for high current levels, providing for efficient power conversion and higher switching speeds.The SI4505DY-T1-GE3 is also available in a “dual-drive” package, allowing for simultaneous high- and low-side switching. This feature increases system flexibility by providing a way to quickly switch between two different modes of operation. Dual-drive packages can also be used to reduce power consumption as they offer the opportunity to switch both sides of a circuit at the same time.The SI4505DY-T1-GE3 is designed to be a reliable, easy to use and flexible device. Its low on-resistance and high-current capabilities make it well-suited for a variety of general purpose switching applications. The device is compatible with a range of logic families, and its dual-drive package provides the user with an efficient, low power alternative for systems requiring multiple switching modes.

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