Allicdata Part #: | SI4567DY-T1-GE3-ND |
Manufacturer Part#: |
SI4567DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 40V 5A 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 40V 5A, 4.4A 2.75W, 2... |
DataSheet: | SI4567DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 5A, 4.4A |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 355pF @ 20V |
Power - Max: | 2.75W, 2.95W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4567 |
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The SI4567DY-T1-GE3 is a general-purpose field effect transistor array that is designed to offer a wide range of applications and working principles. The device features two independent, symmetrical N-channel MOSFETs connected in parallel as well as a load switch, giving it the versatility to be used in a variety of different applications and configurations.
The two independent N-channel MOSFETs in the SI4567DY-T1-GE3 provide high power operation with low drain-source (on-state) resistance. This helps to reduce power dissipation, allowing the device to operate in a wide range of applications. The device also features a low capacitance, making it suitable for high-speed switching applications. Additionally, the device features an integrated load switch, which allows it to be a more efficient switch than other solutions.
The SI4567DY-T1-GE3 is capable of being used in a wide range of applications due to its wide-range operating voltage, high drain current, and fast switching speed. Additionally, the device is RoHS compliant and is capable of being used in a wide temperature range, making it suitable for many environments.
The SI4567DY-T1-GE3 is commonly used in DC-DC converters, power switching, HVAC control systems, automotive electronics, and other similar applications. The device can be used as a single switch or as an array of switches for high-power applications. The device can also be used in LED lighting applications as a current limiter.
The device is fairly easy to use, as it requires only two external components: a gate resistor to control the gate voltage and a drain resistor to set the switching speed. To use the array, the gate voltage must be set to an appropriate level that will turn the device on and off, while the drain resistor will set the switching speed of the array. Once these parameters are set, the device is ready to operate.
The SI4567DY-T1-GE3 is a great choice for a wide range of applications, as it offers high power, low on-state resistance, and easy integration. The device features low capacitance and a low operating voltage, as well as a wide temperature range making it a great choice for many applications. Additionally, the device is RoHS compliant, making it a great choice for those looking for a modern device to use in their projects.
The specific data is subject to PDF, and the above content is for reference
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SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
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SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
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SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
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SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
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