Allicdata Part #: | SI4562DY-T1-GE3-ND |
Manufacturer Part#: |
SI4562DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 20V 2W Surface Mount... |
DataSheet: | SI4562DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4562 |
Description
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A Field Effect Transistor (FET) is an electronic component with a semiconductor body, used to amplify or switch electronic signals. The SI4562DY-T1-GE3 is a FET from Vishay Siliconix commonly used as an integrated circuit in many different applications. This article will discuss the applications and working principles for this component.The SI4562DY-T1-GE3 is a small signal enhancement mode FET that has two source terminals, two drain terminals and one gate terminal. It has a very low on-state resistance, which makes it suitable for low-level power switching applications. The component is capable of operating at frequencies in the range of tens of kHz to several hundred MHz, allowing it to be used in a variety of analog and digital applications.One of the most common applications for the SI4562DY-T1-GE3 is as an audio amplifier. It can be used in a single-ended or push-pull configuration to amplify signals from microphone preamps and other audio sources. It is well-suited to this application due to its low on-state resistance and high-frequency capability.The SI4562DY-T1-GE3 can also be used as a switch in digital circuits. It can switch between Vdd and GND to enable or disable other components in a circuit, allowing components to be quickly and easily activated and deactivated. It is also well-suited to power switching applications, where it can simultaneously switch multiple channels.The SI4562DY-T1-GE3 is constructed using a field effect transistor array in which the individual transistors are arranged in parallel. This arrangement ensures that the component has a high input impedance and low output impedance, making it suitable for a variety of applications.The working principle of the SI4562DY-T1-GE3 is based on the principles of field effect transistors. A voltage applied to the gate terminal of the component causes a current to flow between the source and drain terminals, resulting in a flow of electrons. The amount of electron flow is dependent on the voltage applied to the gate terminal, with greater voltages resulting in larger electron flows.The SI4562DY-T1-GE3 is an excellent choice for a variety of applications, due to its low on-state resistance, high-frequency capability, and array architecture. It has a variety of applications in audio amplifiers, digital circuits, and power switching applications. By understanding the working principles, designers can easily integrate these components into their projects.
The specific data is subject to PDF, and the above content is for reference
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