SI4542DY-T1-E3

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SI4542DY-T1-E3 is a N-channel MOSFET array. It is designed for high speed switching applications and is well-suited for automotive and power management applications. The device can be used in circuits where low on-state resistance and fast switching times are a requirement. It features a theoretical maximum on-state resistance of 12 mOhms, a gate charge of 87.5 nC, and a drain-source breakdown voltage of 4.5 V.

This type of MOSFET is commonly used in power management applications in cars, as it provides very low power consumption, fast switching times, and high efficiency. It can be used in DC/DC converters and inverters, motor drives, and voltage regulators. Additionally, it can be used as a PWM driver, reducing switching losses and improving efficiency.

The SI4542DY-T1-E3 is composed of four N-channel MOSFETs, which are connected in a "make before break" configuration. This configuration ensures the MOSFETs are never conducting concurrently and that no large inrush currents are generated when switching between states. The MOSFETs are connected in parallel to reduce the on-state resistance and to increase the power dissipation capability.

When the input logic signal is high, the top MOSFET is activated and a voltage is applied to the load. When the input logic signal is low, the bottom MOSFET is activated and the load is disconnected from the supply. This type of MOSFET array offers very fast switching between states, as the MOSFETs are never conducting concurrently. Additionally, the MOSFETs have low gate-source thresholds, allowing them to be driven with slower, low-voltage logic signals.

The SI4542DY-T1-E3 MOSFET array is a popular choice for automotive and power management applications, where it can provide high-speed switching, low on-state resistance, and high efficiency. Its four parallel MOSFETs and make-before-break configuration ensure that large inrush currents are avoided and that rapid switching between states is achievable. It can be driven by low-voltage, slower logic signals and has a maximum on-state resistance of 12 mOhms and a gate charge of 87.5 nC.

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