SI4554DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4554DY-T1-GE3TR-ND

Manufacturer Part#:

SI4554DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 40V 8A 8SO
More Detail: Mosfet Array N and P-Channel 40V 8A 3.1W, 3.2W Sur...
DataSheet: SI4554DY-T1-GE3 datasheetSI4554DY-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 20V
Power - Max: 3.1W, 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Description

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SI4554DY-T1-GE3 is a type of semiconductor component which generally belongs to the field of Transistors, specifically FETs and MOSFETs, and more specifically Arrays. It is used in a variety of applications including digital communication, power supply, and power electronics. As its integration level is higher than that of other models, SI4554DY-T1-GE3 has become increasingly popular in the modern semiconductor industry. The following sections will discuss the application field and working principle of the SI4554DY-T1-GE3 in more detail.

Application Field of SI4554DY-T1-GE3

The SI4554DY-T1-GE3 can be used in a wide range of applications. In communication circuits, it can be used to improve signal quality, reduce electromagnetic interference, and increase communication speed. It can be used in various types of power supply circuits to provide optimal power management, efficient circuit design, and improved flexibility. It can also be used in power electronics, such as DC-DC converters, inverters, and AC-DC converters, to provide improved voltage regulation. For example, some power electronics circuits may require an input voltage of 12 volts, and the SI4554DY-T1-GE3 can be used to efficiently convert the voltages to the desired levels.

Working Principle of SI4554DY-T1-GE3

The SI4554DY-T1-GE3 is an integrated gate array, which is a type of semiconductor component made up of a number of transistors on a single silicon chip. It consists of four transistors, three FET transistors and one MOSFET transistor, which can be used to control the current flowing between two or more points. The MOSFET transistor is used to control the on/off state of the transistors, allowing them to act as switches. This allows SI4554DY-T1-GE3 to operate as a high-speed switch, and it can be used to control the power in many applications.

The SI4554DY-T1-GE3 also contains a complementary logic device, which is used to allow for the integration of logic functions into a semiconductor circuit. This allows for the combination of functions, such as AND, OR, NAND, and NOR. It also allows for the control of the inputs and outputs of a circuit, which can be used to improve the efficiency of the circuit. Furthermore, it allows for the control of the power consumption of the circuit, which can be used to reduce power consumption and improve energy efficiency.

Conclusion

The SI4554DY-T1-GE3 is a type of semiconductor component which generally belongs to the field of Transistors, specifically FETs and MOSFETs, and more specifically Arrays. It is used in a variety of applications including digital communication, power supply, and power electronics. As its integration level is higher than that of other models, SI4554DY-T1-GE3 has become increasingly popular in the modern semiconductor industry. The SI4554DY-T1-GE3 consists of four transistors, three FET transistors and one MOSFET transistor, which can be used to control the current flowing between two or more points. It also contains a complementary logic device, which is used to allow for the integration of logic functions into a semiconductor circuit. Through these features, the SI4554DY-T1-GE3 is able to provide a wide range of benefits, including improved signal quality, reduced electromagnetic interference, increased communication speed, and improved energy efficiency.

The specific data is subject to PDF, and the above content is for reference

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