SI4542DY-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4542DY-T1-GE3 is a silicon N-Channel MOSFET transistor capable of operating at a wide range of temperatures from -55°C to +200°C. Manufactured by Vishay, SI4542DY-T1-GE3 is a floating-gate MOSFET array, consisting of a source, drain, and gate regions, which are interconnected and arranged into a designed structure. The design provides a high-voltage, high-on-state resistance, low-drain-to-source capacitance, and low-gate-charge operating capabilities.

The SI4542DY-T1-GE3\'s main application field is in power management and switching circuits such as lighting, motor control, consumer electronics and industrial automation. Its applications also include dc-dc converters, and synchronous rectifiers. The device\'s basic function is to control the power flow and switching of voltage flow in electronic components. Its high on-state resistance to gate charge ratio and low power dissipation allow for efficient power transfer for both AC and DC applications.

The working principle of SI4542DY-T1-GE3 can be explained in two parts, the on-state operation and the off-state operation. In the on-state operation, the device is activated by an incoming voltage Vg to open the conduction path between its source and drain regions, allowing a current to flow. In the off-state operation, the device is blocked by inhibiting the incoming voltage Vg, and no current will be able to flow across the device.

The basic configuration of the SI4542DY-T1-GE3 MOSFET array consists of two N-Channel MOSFET cells, arranged in parallel with their respective sources and drains interlinked. This parallel connection aids to reduce the device\'s on-state resistance and power dissipation characteristics, as well as providing a higher frequency operation capability. This device also provides a superior level of integration, which allows it to support advanced power management/distribution applications.

The device is also designed with an internal advanced Schottky logic clamp voltage generator, which helps to reduce power consumption and keep the on-state load current constant in both normal and low-voltage operation. It also includes a protection circuit to limit excessive gate charge and Jitter Cleaner for high frequency operation.

In conclusion, the SI4542DY-T1-GE3 MOSFET array offers superior levels of integration and a wide range of temperatures, perfect for power management and switching circuits. Its design also includes an internal advanced Schottky logic clamp voltage generator and a protection circuit to limit excessive gate charge, allowing it to manage advanced power management/distribution applications. Its floating-gate implementation allows it to be used in both normal voltage operation and low voltage operation.

The specific data is subject to PDF, and the above content is for reference