SI4599DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4599DY-T1-GE3TR-ND

Manufacturer Part#:

SI4599DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 40V 6.8A 8SOIC
More Detail: Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3....
DataSheet: SI4599DY-T1-GE3 datasheetSI4599DY-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power - Max: 3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4599
Description

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The SI4599DY-T1-GE3 is a type of Field-Effect Transistor (FET) array, more specifically a Power MOSFET array designed for efficient, low-cost switching. It is made using a specially designed, advanced process technology. The SI4599DY-T1-GE3 is offered in a Quad Flat No Lead (QFN) package and contains four devices in this package.

The SI4599DY-T1-GE3 is particularly well-suited for use in power-management applications such as automotive, solar, computer processor, communications, and HVAC (heating, ventilation and air conditioning) systems. It can also be used for other applications like motor control, lighting, and power supplies. Its features such as low on-resistance, high current ratings, temperature stability, high thermal dissipation, low gate charge, and low capacitances make it perfect for these uses.

The working principle behind the SI4599DY-T1-GE3 is not much different than any other FET array. It consists of four individual FETs, each with its own gate and drain terminal, connected in parallel. The central core element is the gate, which controls the passage of current across its channel by controlling the voltage applied to it. When the gate voltage is high, the FET is in the “on” state and current flows across its channel. When the gate voltage drops, the FET is in the “off” state and no current flows across its channel.

The SI4599DY-T1-GE3 is designed to efficiently switch large amounts of power. Each device is rated for up to 110 A and 80 mΩ in the on-state, and typically only requires 10 mV of gate drive for full conduction. With its low thermal resistance and high current ratings, it can handle large thermal loads with minimal power losses. Additionally, its high dielectric strength allows it to safely operate in high-voltage environments with minimal risk of damage.

The SI4599DY-T1-GE3 is a versatile and efficient FET array that is well-suited for a wide range of applications. Its low on-resistance and high current ratings make it ideal for high-power applications such as those found in motor control, lighting, and power supplies. Its high thermal dissipation and temperature stability allow it to safely handle large thermal loads with minimal power losses. Additionally, with its low gate charge and low capacitances, it is perfect for use in high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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