SI4561DY-T1-E3

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The SI4561DY-T1-E3 device is a MOSFET Array incorporated with two P-Channel enhancement mode MOSFETs. It is designed with a very low leadframe profile, making ideal for applications which require a low profile packaging. Featuring excellent power handling and low on-resistance, the SI4561DY-T1-E3 can be used in a variety of electronic applications.

Applications

• Battery Management Systems
• Power Supply and Load Switching
• Power Sequencing & Over-Voltage Protection
• Automotive Powertrain Electronic Control Units
• Industrial Motor Controls
• High Power DC/DC Converters
• High Power Battery Chargers
• Solid State Lighting

Working Principle

The SI4561DY-T1-E3 has two integrated P-Channel MOSFETs, and utilizes a high current drain and drive buffer structure. This provides a high-speed switching performance and a high peak current capability. The device is designed for load switching and power supply applications and has a low gate threshold voltage, making it suitable for battery management systems and over-voltage protection.

The MOSFETs within the device have a low on-resistance, improving the electrical efficiency of the device for switching and protection applications. The device also offers excellent electro-static discharge and latch-up immune characteristics. The device is also highly resistant to reverse currents.

The SI4561DY-T1-E3 is a reliable MOSFET array, that is available with a thin 1.0 mm U-DFN package. This makes it ideal for applications that require a low profile, such as industrial power electronics and automotive powertrain control.

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