
Allicdata Part #: | SI4562DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4562DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 20V 2W Surface Mount... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Base Part Number: | SI4562 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7.1A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4562DY-T1-E3 is a type of field effect transistor (FET) array. It is usually used in applications that require high current and good power supply rejection ratio (PSRR) and low input impedance. The SI4562DY-T1-E3 has two N-type FETs, two P-type FETs, and two high voltage switches, as well as an integrated driver. This combination of components allows the transistor array to be used as a driver circuit for high speed signals, as well as to provide filtering and current protection.
The integrated driver allows the transistor array to be used as a current source. The driver is capable of providing up to 1.6A of current for up to 70V DC. This makes the SI4562DY-T1-E3 ideal for high power applications such as telecom amplifiers and power management circuits. The integrated driver also provides flexibility in the way the FETs can be used. For example, the FETs can be used in parallel, in series, as a dual series switch, or as a single switch. All of these configurations provide different benefits depending on the application.
The SI4562DY-T1-E3 also has an excellent PSRR performance which gives it the ability to reduce unwanted noise. This is especially useful in applications where there is a need to reduce the power supply ripple, such as with audio amplifiers. The high input impedance and low output capacitance of the device also allow it to be used in high frequency applications such as radio frequency (RF) circuits, where it can enhance the signal clarity. The device also has excellent thermal capability, allowing it to handle large dissipated power without compromising the performance.
The working principle of the SI4562DY-T1-E3 is simple. The integrated driver provides a voltage to the Gate of the FETs, which then adjusts the resistance of the channel and controls the current flow. The current can be controlled either through the Gate-Source voltage or through the Gate-Drain voltage. Additionally, the FETs can be used in a “pull up” or “pull down” configuration, which allows current to be pulled up to the power source or pulled down to ground. The SI4562DY-T1-E3 is a versatile device and can be used in many different applications, including audio amplifiers, power management circuits, telecom amplifiers, RF circuits, and more.
The specific data is subject to PDF, and the above content is for reference
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SI4532ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4569DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4539ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4599DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8S... |
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SI4567DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4500BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8S... |
SI4542DY | ON Semicondu... | 0.5 $ | 1000 | MOSFET N/P-CH 30V 6A 8SOI... |
SI4565ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4500BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8-... |
SI4544DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4505DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4505DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4567DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4511DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4532CDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 6A 8-SO... |
SI4559ADY-T1-GE3 | Vishay Silic... | -- | 42500 | MOSFET N/P-CH 60V 5.3A 8-... |
SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4542DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4563DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4561DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4501ADY-T1-E3 | Vishay Silic... | -- | 1012 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4501BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4590DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P CHAN 100V SO8 ... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4563DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4564DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 10A 8SO... |
SI4532ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
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