SI4567DY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4567DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4567DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 40V 5A 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 40V 5A, 4.4A 2.75W, 2... |
DataSheet: | SI4567DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 5A, 4.4A |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 355pF @ 20V |
Power - Max: | 2.75W, 2.95W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4567 |
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The SI4567DY-T1-E3 is an advanced monolithic high-voltage Field Effect Transistor (FET) array designed for amplifying, switching, and protection applications involving a wide range of voltages and frequencies. It features an integrated voltage regulator, integrated impedance matching circuits for power efficiency, and a wide range of voltage and current specifications. The SI4567DY-T1-E3 is ideal for switching and protection applications in industrial, automotive, and consumer applications.
The SI4567DY-T1-E3 is a monolithic 8-channel FET array, with four high-side FETs and four low-side FETs. The four high side FETs are used for high side switching, while the four low side FETs are used for low side switching. The FETs are arranged in a series, with the FETs at the top of the series connected to the gate and the FETs at the bottom of the series connected to the drain. The four high side FETs have an absolute maximum gate-to-source voltage of 24V and drain-to-source voltage of 110V, while the four low side FETs have an absolute maximum gate-to-source voltage of -8V and drain-to-source voltage of -30V. The channel-to-channel isolation is guaranteed up to 100V.
The FET array is controlled by the integrated voltage regulator which supplies the FETs with the power required for switching. The regulator provides up to 10V voltage regulation, up to 10V current regulation, and up to 40V surge protection. Additionally, the regulator is able to minimize input power and also provide programming of the control voltage for different operating levels. The ON resistance of each FET is typically 0.1 Ω.
The integrated impedance matching circuit allows the FETs to operate over a wide range of voltages and frequencies. The circuit is designed to match the load conditions and prevent unwanted current flow through the FET array. Additionally, the impedance matching circuit minimizes power consumption and maximizes efficiency. The FET array is also designed to withstand electrostatic discharge (ESD) up to 4kV.
The SI4567DY-T1-E3 is an excellent choice for industrial, automotive and consumer products that require multiple high-side switching and/or low-side switching. The integrated voltage regulator, impedance matching circuit, and high voltage and current specifications make it an ideal choice for switching and protection applications. The FET array requires only a minimal amount of input power, providing a cost-effective switching solution.
The specific data is subject to PDF, and the above content is for reference
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SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
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SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
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SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
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