Allicdata Part #: | SI4565ADY-T1-GE3-ND |
Manufacturer Part#: |
SI4565ADY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 40V 6.6A 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 40V 6.6A, 5.6A 3.1W S... |
DataSheet: | SI4565ADY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A, 5.6A |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 625pF @ 20V |
Power - Max: | 3.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4565 |
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SI4565ADY-T1-GE3 is a part of the FETs and MOSFETs Array family, which includes a series of transistors. The device has an integrated high-performance H-bridge driver (up to 12V switching) and is suitable for industrial, automotive, and other general-purpose applications.
The operating principle of SI4565ADY-T1-GE3 is that it includes two FETs and two MOSFETs, each with a dielectric layer between them. The FETs act as the input and output transistors, and the MOSFETs act as the driver for the transistors. When the transistors are driven with a voltage, the FETs will open and close, and the MOSFETs will control the current flowing through the transistors. This allows for precise control of the current and voltage levels of the device.
The most common application for the SI4565ADY-T1-GE3 is in high-voltage, high-current power switching. It is designed for applications where high levels of power must be switched quickly and efficiently, such as in motor drives and other industrial applications. Additionally, the device is also used in automotive applications where high levels of power must be switched, such as in the ABS braking system.
The SI4565ADY-T1-GE3 also has excellent performance under extreme temperature conditions. It is capable of operating at temperatures between -40°C and 150°C, which makes it particularly suitable for automotive and industrial applications. The device also has an ESD rating of 4kV, which is three times higher than the industry standard.
The SI4565ADY-T1-GE3 is a highly reliable device, with improved thermal performance over its predecessors. Additionally, it has a low on-state resistance, fast switching speeds, and is immune to latch-up. The device is ideal for high-voltage, high-current power switching applications.
In conclusion, the SI4565ADY-T1-GE3 is a part of the FETs and MOSFETs Array family. It has an integrated high-performance H-bridge driver and is suitable for industrial, automotive, and other general-purpose applications. It has excellent performance under extreme temperature conditions and is capable of switching large amounts of power quickly and efficiently. The device is reliable, immune to latch-up, and has a low on-state resistance, making it an ideal choice for high-voltage, high-current power switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI4500BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8S... |
SI4501ADY-T1-E3 | Vishay Silic... | -- | 1012 | MOSFET N/P-CH 30V/8V 8SOI... |
SI4511DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4563DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
SI4561DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4532ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4539ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4562DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4532ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 3.7A 8-... |
SI4505DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4505DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4500BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.6A 8-... |
SI4501ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V/8V 8-SO... |
SI4511DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 7.2A 8-... |
SI4539ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4.4A 8-... |
SI4542DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4544DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 8-SOICM... |
SI4561DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 6.8A 8-... |
SI4562DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 8-SOICM... |
SI4563DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 8A 8-SO... |
SI4565ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 6.6A 8-... |
SI4567DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 40V 5A 8-SO... |
SI4569DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 40V 7.6A 8-... |
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SI4542DY | ON Semicondu... | 0.5 $ | 1000 | MOSFET N/P-CH 30V 6A 8SOI... |
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