SI5475DDC-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI5475DDC-T1-GE3 is a single N-Channel Enhancement Mode Field-Effect Transistor (FET) fit for low-voltage and low-current applications. It requires an extremely small gate-charge, and the on-state resistances is exceedingly low. As many N-Channel FETs, the SI5475DDC-T1-GE3 is manufactured with an Aluminum-Composite Dielectric (ACD) gate which enables the transistor to allow an exceptionally easy and fast switching.

When placed in a circuit, the SI5475DDC-T1-GE3 has a very minimal charge delay, and since its RDS(on) is extremely low, it is able to deliver good performance even at higher switching frequencies. There is also an on-resistance variation between temperature ranges, which makes it very reliable in high temperatures. Additionally, due to the extremely low gate threshold voltage, the SI5475DDC-T1-GE3 can be used even at low voltages, which increases its efficiency and reliability.

The SI5475DDC-T1-GE3 has a wide range of applications in digital circuits, power control and motor control circuits. It is especially popular when used as an electronic switch in circuits controlling power demand in devices such as mobile phones and tablet computers. Furthermore, due to its low gate charge, the SI5475DDC-T1-GE3 can be used in circuits which require fast switching of power.

The working principle of the SI5475DDC-T1-GE3 is similar to most other N-Channel FETs. It requires a positive gate voltage to turn the channel on. When the channel is turned on, the current starts flowing through it and the voltage across the drain and source terminals of the transistor normalizes. This voltage-dependent process is called saturation, and when it occurs, the current through the channel increases substantially.

The SI5475DDC-T1-GE3 also works on a negative gate voltage, which is called reverse biased. In this state, the channel is closed, and the transistor won\'t let the current flow through it. This process is known as cut-off, and is useful in protecting the circuit.

In summary, the SI5475DDC-T1-GE3 is a single N-Channel FET suitable for low-voltage and low-current applications. It allows switching at high speeds and is suitable for power control in digital circuits. The working principle of the SI5475DDC-T1-GE3 is based on the application of positive gate voltage to turn the channel on and reverse bias to turn the channel off. Its low gate charge, on-resistance variation over temperature and low gate threshold voltage make it a dependable choice for switching applications in both low and high temperature environments.

The specific data is subject to PDF, and the above content is for reference