SI5499DC-T1-E3

Vgs(th) (Max) @ Id:	800mV @ 250µA
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	1206-8 ChipFET™
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 6.2W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1290pF @ 4V
Vgs (Max):	±5V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 8V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	36 mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	8V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI5499DC-T1-E3 is a highly specialized single N-channel MOSFET from the renowned electronics manufacturer, Vishay. MOSFETs, which stands for metal-oxide-semiconductor field-effect transistors, are semiconductor devices which are used to control and switch power as well as current in a wide range of electrical applications. The SI5499DC-T1-E3 is one of Vishay’s most popular transistors and is widely used in many industries, such as automotive, industrial, and consumer electronics.The SI5499DC-T1-E3 is a highly efficient and versatile transistor, which makes it ideal for use in a variety of applications. First and foremost, the SI5499DC-T1-E3 is great for switching high power loads and controlling current. It is capable of switching up to 60 Volts and handling up to 49 amps continuously when properly heat-sinked. This makes the SI5499DC-T1-E3 an ideal choice for use in motor control, power supply circuits, DC-AC inverters, and many other industrial and consumer applications.The SI5499DC-T1-E3 also offers excellent noise immunity and high-frequency operation for noise-sensitive applications. The transistor is able to achieve up to 10MHz switching frequencies with minimal noise and low charge injection. This makes the SI5499DC-T1-E3 ideal for use in audio devices, RF circuits, cellular phones, and other high-frequency applications.In terms of its actual construction, the SI5499DC-T1-E3 is comprised of an N-Channel MOSFET which is formed by implanting n-type materials into the surface of a substrate made of p-type silicon. This forms a conducting channel that runs between the source and drain terminals of the transistor. The voltage applied to the transistor’s gate terminal then controls the current that flows through the channel, making it possible to switch currents and voltages on and off.The SI5499DC-T1-E3 also provides excellent protection from overvoltage, making it a great choice for use in a variety of safety circuits. By connecting the device in series with a load and applying a voltage to its gate terminal, it can be used as a switch that will turn off current when the voltage level exceeds a certain threshold. This makes the SI5499DC-T1-E3 a great choice for use in surge protection circuits and other safety circuits.Overall, the SI5499DC-T1-E3 is an incredibly versatile and efficient transistor which is ideal for use in a wide range of electrical applications. Its ability to control current, switch high-power loads, and provide excellent noise immunity make it a great choice for use in many different industries. Its cost-effective prices also make it a great value for buyers, making the SI5499DC-T1-E3 a great choice for all kinds of electronics projects, no matter the budget.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description