SI5457DC-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.4V @ 250µA
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	1206-8 ChipFET™
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.3W (Ta), 5.7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1000pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	36 mOhm @ 4.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

SI5457DC-T1-GE3 is a N-channel, enhancement-mode, insulated gate, high-voltage MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The product is designed using NOVP (Normalized On-Voltage Process), and with a gate-source voltage of 30V and an RθJA of 95°C/W, this product is suitable for use in power module applications that require high performance and high output current. In this article, the application field and working principle of the product will be discussed in detail.

Application Field

SI5457DC-T1-GE3 is a device primarily used for power management in electrical systems, particularly in automotive applications. It is suitable for use as a power FET (field effect transistor) for structures such as DC/DC converters, buck converters, and other power MOSFETs switching applications, as well as a low voltage drive switch. Furthermore, the product is suitable for driving high side MOSFET in systems with increased power density. Other than automotive applications, SI5457DC-T1-GE3 can also be used in applications such as motor drive, server power supply, battery management systems and other high-current power modules.

Working Principle

SI5457DC-T1-GE3 works on the same principle as a traditional MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It comprises three terminals: the gate (G), the source (S) and the drain (D). When a positive voltage is applied to the gate terminal, an electric field is induced in the Gate Oxide. This electric field causes electrons from the source terminal to be attracted to the gate, reducing the resistance between the source and the drain. This in turn allows current to flow between the source and the drain, thus turning on the transistor.A key feature of the SI5457DC-T1-GE3 is its capability to withstand high-voltage transients. This capability is enabled by its extended source-drain voltage rating (VDSS) of 30V and UIS rating of 1uA. This combination not only enables the device to survive large transients, but also makes it suitable for use in applications with increased power density.

Conclusion

The SI5457DC-T1-GE3 is an N-channel, enhancement-mode insulated gate high-voltage MOSFET designed using NOVP. It is an excellent choice for power management applications, particularly in automotive applications, due to its high performance and high output current. The device is also capable of surviving high voltage transients due to its extended source-drain voltage rating and UIS rating.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description