Allicdata Part #: | SI5415EDU-T1-GE3TR-ND |
Manufacturer Part#: |
SI5415EDU-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 25A PPAK CHIPFET |
More Detail: | P-Channel 20V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface... |
DataSheet: | SI5415EDU-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® ChipFET™ Single |
Supplier Device Package: | PowerPAK® ChipFet Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.8 mOhm @ 10A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
The SI5415EDU-T1-GE3 is a type of FET (Field Effect Transistor) that’s designed to process and transfer electrical signals between different components of an electronic circuit. It uses a P (positive) channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a gate threshold voltage range of -2~4V and an on-resistance of 0.6Ω. The device is used to drive a low load, such as an LED, sound electronics, or an antenna, and is often found in automotive, industrial, and home electronics applications.
Application Field
The SI5415EDU-T1-GE3 is suitable for use in applications where a low load needs to be driven. Some common applications include automotive, such as power windows, wiper systems, and ECU control systems; industrial, such as machine automation systems and motion control; and home electronics, such as stereo systems, TVs, and remote-controlled devices.
Working Principle
The working principle behind the SI5415EDU-T1-GE3 is based on the changing of an electrical charge. Through the application of an electric field, the strength of an existing electrical charge can be changed. This is achieved by passing electrons through the semiconductor material of the FET, which produces a change in the voltage between the source and drain terminals. This change in the voltage can then be used to control a load, such as an LED or sound amplifier.
The SI5415EDU-T1-GE3 relies on metal oxide to control the flow of electrons, which is why it’s known as a MOSFET. The metal oxide layer acts as a barrier between the source and the drain, helping to prevent large current surges, reduce power consumption, and increase responsiveness. The gate threshold voltage is the voltage required to trigger the flow of electrons, while the on-resistance of the FET is the resistance between the source and the drain when the gate is triggered.
Conclusion
The SI5415EDU-T1-GE3 is a type of FET that uses a low on-resistance to drive smaller loads. Due to its robust construction, it is able to handle more complex applications than a traditional transistor, making it an ideal choice for automotive, industrial, and home electronics applications. The FET relies on the application of an electric field to change the strength of an existing electrical charge, allowing the device to control a load.
The specific data is subject to PDF, and the above content is for reference
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