Allicdata Part #: | SI5468DC-T1-GE3TR-ND |
Manufacturer Part#: |
SI5468DC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 6A 1206-8 |
More Detail: | N-Channel 30V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface... |
DataSheet: | SI5468DC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 5.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 435pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 6.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI5468DC-T1-GE3 is a high-performance, automotive-grade power MOSFET designed for use in cars, trucks, and other electrified vehicles. This transistor is an enhancement-mode device that operates as a high-speed switching device. It offers low on-resistance and high frequency performance for enhanced system efficiency and robustness. The SI5468DC-T1-GE3 is constructed with a double diffused silicon layer to provide improved on- and off-resistance. The device has been optimized to operate at high temperatures, up to 175°C, and it is capable of delivering steady and consistent performance.
The SI5468DC-T1-GE3 is a two-terminal device with an internal resistance, or gate threshold voltage, between the source and drain terminals. The device utilizes a MOSFET structure, which is composed of three layers of semiconductor material: a substrate, gate oxide and a gate. The gate oxide acts as a gatekeeper, controlling the flow of electrical current between the source and drain, while the gate can be positively or negatively charged to vary the flow of current. When a negative voltage is applied to the gate, the MOSFET opens, allowing current to flow between the source and drain. When a positive voltage is applied to the gate, the MOSFET closes, preventing current from flowing.
The SI5468DC-T1-GE3 is designed for use in automotive applications such as engine control modules, brakes and power systems. It is also suitable for use in high-drain, low-voltage applications such as LED lighting, automotive airbag systems and telecommunications applications. The device is capable of operating at high frequencies and high temperatures without sacrificing performance.
The SI5468DC-T1-GE3 is a highly efficient switching component, capable of handling up to 30A flowing through the drain to source. It has a low gate-to-drain charge, which helps reduce EMI and provide system reliability. The device also has low internal gate-to-source and drain-to-source leakage and a low gate threshold voltage, making it suitable for high-speed and high-temperature applications.
In automotive applications, the SI5468DC-T1-GE3 is ideal for power circuits, especially for those requiring robust switching performance and thermal performance. The device is also well suited for lighting applications, which require consistent output and long lifetimes, and for power management systems, where efficient switching is necessary. Furthermore, the device can be used in applications such as motor control and sensorless motor control, where high switching speed and reduced power losses are paramount.
Overall, the SI5468DC-T1-GE3 is a high-performance, automotive-grade power MOSFET with enhanced system efficiency, low on-resistance and high frequency capability. The device offers robust switching performance and thermal performance in high-drain, low-voltage applications, and it is suitable for a wide range of automotive and other applications where high switching speed and energy efficiency are needed.
The specific data is subject to PDF, and the above content is for reference
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SI5475DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 5.5A 1206... |
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