SI5440DC-T1-GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	1206-8 ChipFET™
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 6.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	19 mOhm @ 9.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The SI5440DC-T1-GE3 is a single high-performance, low voltage, high-side non-inverting NexFET power MOSFET. It is designed to switch large currents with low power losses across a wide range of voltages and wide temperature range. It has a relatively low output voltage drop of 0.2V, very fast switching speeds, low-voltage demand and superior on-state characteristics.</p><p>The SI5440DC-T1-GE3 belongs to a new generation of NexFET power MOSFETs. It is an ideal solution for dc-dc converters, server and network power supplies, main power and control systems, industrial automation and any other application where high efficiency and dependability are critical.</p><p>The SI5440DC-T1-GE3 has an integrated power MOSFET gate drive, enabling higher switching frequencies and providing lower switching losses. The high current gate driver provides superior gate drive capability, which reduces power loss and improves overall efficiency. The integrated gate drive also eliminates the need for external driver components, saving board space and cost.</p><p>The SI5440DC-T1-GE3 is optimized for low-voltage applications, and can be operated from a wide supply range from 3.3V to 12V. Its low on-resistance and high avalanche rating provide excellent thermal performance and reliability. The low-voltage driver ensures high efficiency, even at low supply voltages.</p><p>The SI5440DC-T1-GE3 is a high-side device and features a non-inverting configuration. This improves coexistence with other non-inverting devices and also ensures compatibility in applications designed for single-ended switches. The device also features a Schottky diode to help prevent shoot-through currents during transitions.</p><p>The SI5440DC-T1-GE3 is capable of delivering up to 12A of continuous current and up to 50A of peak current. The device is available in a tiny, 4mm x 4mm leadless package that is only 35µm thick, making it one of the smallest and most efficient power MOSFETs currently available.</p><p>In summary, the SI5440DC-T1-GE3 is a high-performance, low voltage, high-side, non-inverting NexFET power MOSFET. It is designed to switch large currents with low power losses, has a wide operating voltage range, fast switching speed, low-voltage demand, integrated gate drive and Schottky diode. The device is available in the tiny 4mm x 4mm leadless package, making it an ideal solution for space constrained applications.</p>

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