Allicdata Part #: | SI6966DQ-T1-E3-ND |
Manufacturer Part#: |
SI6966DQ-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 20V 4A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4A 830mW Surfa... |
DataSheet: | SI6966DQ-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Base Part Number: | SI6966 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI6966DQ-T1-E3 is an array of Field Effect Transistors (FETs) produced by Vishay. It is commonly used in a variety of applications ranging from power management to general-purpose switching and can operate over a wide voltage range. The FET’s low on resistance makes it especially suitable for use in power management applications where low power dissipation and low noise are desired.
The SI6966DQ-T1-E3 consists of up to 19 integrated circuits that can be connected in parallel to provide higher current handling capacity in applications where more than one FET is required. Each array includes two P-channel and two N-channel FETs with low on-resistance, low threshold voltage, and low gate drive requirements. The array is also designed with special features to protect the FETs from over-voltage and thermal overload condition.
The working principle of the SI6966DQ-T1-E3 involves what is known as a “gate-controlled” system. This system works by using a gate voltage to control the switching of the FETs. A positive voltage is applied to the gate of the FET to turn it on while a negative voltage is applied to the gate of the FET to turn it off. The gate voltage directly affects the current flowing through the FETs, allowing the device to be used to control and regulate the flow of an electrical current.
The SI6966DQ-T1-E3 is commonly used for a variety of power management applications. It is able to switch large currents at high frequency with low losses, making it ideal for switching in dc-dc converters, active filters, and motor drives. The device can also be used for general-purpose switching applications, such as to control the switching of lights switches, appliances, and equipment in industrial systems.
Another common application for the SI6966DQ-T1-E3 is in audio systems. The device can be used to switch audio signals between components, such as amplifiers and speakers. The device’s low on-resistance helps keep the audio signals clean and free of distortion. The device is also suitable for use in audio applications where high power handling and low noise are desired.
The SI6966DQ-T1-E3 is a versatile device that can be used in a wide variety of applications. Its low on-resistance makes it ideal for use in power management applications, while its ability to switch large currents at high frequency makes it suitable for audio applications as well. The device is also designed with special features to protect it from over-voltage and thermal overload conditions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI6925ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8TS... |
SI6928DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8TSSO... |
SI6943BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6963BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8TS... |
SI6969BDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4A 8TSSO... |
SI6981DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
SI6983DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.6A 8TS... |
SI6993DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 3.6A 8TS... |
SI6925ADQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8-T... |
SI6928DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8-TSS... |
SI6963BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8-T... |
SI6975DQ-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6975DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6924AEDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 28V 4.1A 8-T... |
SI6981DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
SI6993DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 3.6A 8-T... |
SI6933DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6933DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6943BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6955ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6955ADQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6966DQ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A 8TSSO... |
SI6966DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A 8TSSO... |
SI6966EDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
SI6966EDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
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SI6973DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.1A 8TS... |
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SI6954ADQ-T1-E3 | Vishay Silic... | -- | 1500 | MOSFET 2N-CH 30V 3.1A 8TS... |
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