SI6969DQ-T1-E3 Allicdata Electronics
Allicdata Part #:

SI6969DQ-T1-E3-ND

Manufacturer Part#:

SI6969DQ-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 12V 8TSSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 1.1W Surface ...
DataSheet: SI6969DQ-T1-E3 datasheetSI6969DQ-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Base Part Number: SI6969
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI6969DQ-T1-E3 is a three-terminal integrated circuit (IC) power MOSFET array chip specifically designed for applications that require high voltage switching and low on-resistance. It is build up of an N-channel enhancement mode MOSFET and is intended for use in 4A (max., 250V) DC-DC converters and low side switches. The SI6969DQ-T1-E3 is designed to switch heavy currents and transfer long operating lifetime while allowing excellent thermal performance and providing low on-resistance.

The SI6969DQ-T1-E3 contains a P-type input MOSFET array, two complimentary N- and P-channel MOSFETs and one pre-driver in a 8-pin VQFN package. Its total package features a max Vin to Vout voltage range of 100V to 650V, a max current of 4A and a typ on-resistance of 5m?. It is suitable for a wide variety of applications such as motor drivers, audio amplifiers, DC/DC converters, general switch, solar energy power distribution, as well as home appliances and automotive electronics.

The working principle of SI6969DQ-T1-E3 is simple and involves the connection between the source, drain and gate of the which is then controlled by the microcontroller or processor. When the gate voltage is low, the MOSFET will be off and no current will flow through the circuit, whereas when the gate voltage is high, the MOSFET will be on, allowing current to flow. This type of structure allows for the use of lower power consumption and faster switching times than other methods. Furthermore, the gate voltage can also be adjusted to control the flow of current through the circuit, which is used in many modern electronics applications.

Due to its simple operating principle and versatile applications, the SI6969DQ-T1-E3 is an ideal choice for many power converters, switch, and other applications that require reliable, high-voltage switching and low on-resistance. It is also well-suited for applications where a low power consumption and high switching speed is desired, such as motor drivers and audio amplifiers. Additionally, the thermal performance and on-resistance allows for further savings on power consumption and cost, making the SI6969DQ-T1-E3 a cost-effective solution for many power management applications.

The specific data is subject to PDF, and the above content is for reference

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