SI6913DQ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI6913DQ-T1-GE3TR-ND

Manufacturer Part#:

SI6913DQ-T1-GE3

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 12V 4.9A 8-TSSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 4.9A 830mW Sur...
DataSheet: SI6913DQ-T1-GE3 datasheetSI6913DQ-T1-GE3 Datasheet/PDF
Quantity: 30000
1 +: $ 0.34000
10 +: $ 0.32980
100 +: $ 0.32300
1000 +: $ 0.31620
10000 +: $ 0.30600
Stock 30000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 900mV @ 400µA
Base Part Number: SI6913
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI6913DQ-T1-GE3 is a dual N-channel and FET array. It is capable of operating over a range of temperatures, making it a useful solution for a variety of applications. Its wide operating voltage range allows it to be used as a power supply regulator as well as in signal switching applications. The SI6913DQ-T1-GE3 also incorporates a thermal shutdown system, helping to ensure the device is safe in high temperature environments.

The SI6913DQ-T1-GE3 has two N-channel FETs in one package. Each FET has two gates, though the gates are not connected. The FETs are designed to function in parallel, each handling its own section of the circuit. This particular FET has a very low on-resistance, meaning it requires little voltage to switch on, making it very efficient in applications where low voltage is needed.

In order for the SI6913DQ-T1-GE3 to function correctly, it has to have a drain connected to the source. This ensures that the FET can receive a signal, allowing it to switch on and off when needed. The source is connected to the gate through an internal connection, which allows the FET to be activated or deactivated as needed. Once the source is connected to the gate, it cannot be disconnected, making it very reliable in its operation.

The SI6913DQ-T1-GE3 is predominantly employed in systems where the main power supplies need to be regulated. Although voltage regulation can usually be done using discrete components, using FETs makes the process far simpler and more efficient. The thermal protection system incorporated into the SI6913DQ-T1-GE3 can be used to ensure that the FETs don\'t suffer from any potential damage from working at high temperatures, making it suitable for use in high power applications.

In addition to its common use as a voltage regulator, the SI6913DQ-T1-GE3 can also be used in signal switching applications. As each FET has its own separate gate, it can be used to switch a single signal between two different circuits. The FETs can also be used as drivers for a variety of digital and logic circuits, allowing them to be switched on and off as needed.

Overall, the SI6913DQ-T1-GE3 is a highly efficient and reliable FET array. Its low on-resistance and wide operating voltage range make it the ideal solution for a variety of applications. Its thermal protection system ensures that it can be used safely in high temperature applications, and its two separate gates make it a useful tool for switching signals and driving digital and logic circuits.

The specific data is subject to PDF, and the above content is for reference

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