SI6966DQ-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI6966DQ-T1-GE3 is a unique MOSFET array consisting of four independent output circuits. This array is formed with a single source, drain and gate, and each MOSFET is separately controlled. This makes the array ideal for applications where a high-density solution and/or a low-voltage operation is desired. In addition, its zero gate-threshold voltage allows for superior device compatibility and improved efficiency in many applications.

The SI6966DQ-T1-GE3 is available in an industry-standard dual in-line plastic-leaded flat package (DIP) that allows for easy assembly and management. Its superior ESD protection makes it ideal for use in sensitive electronic equipment. Its four control gates allow for single and/or dual load applications, and its wide voltage range is suitable for a variety of different applications.

The main application of the SI6966DQ-T1-GE3 is power switching. It is used in a variety of different systems such as resolvers and coin-operated arcade machines. Its low on-resistance of just 3.5 ohms ensures that it can handle high-power circuits without much difficulty. Furthermore, its high efficiency and low RDS(ON) make it ideal for applications where efficiency is a priority.

The working principle of the SI6966DQ-T1-GE3 is quite simple and straightforward. When voltage is applied to its gate, current is passed from its source to its drain. This current can flow either way, depending on the polarity of the voltage applied. When a voltage of greater than the gate threshold voltage (3.5V) is applied to the gate, the MOSFET switches on and current is allowed to flow through it. Once a current is flowing, the device will stay in its ON state until the voltage is removed, or until the current level drops below the off-state current (1 mA).

In summary, the SI6966DQ-T1-GE3 is an ideal solution for high-density, low-voltage power switching applications. Its four control gates provide a wide range of customizability, and its zero gate-threshold voltage ensures superior device compatibility. In addition, its wide voltage range and ESD protection make it suitable for a variety of different applications. Lastly, its simple working principle ensures that it can be used in a variety of different circuits with ease.

The specific data is subject to PDF, and the above content is for reference