Allicdata Part #: | SI6993DQ-T1-GE3TR-ND |
Manufacturer Part#: |
SI6993DQ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 30V 3.6A 8-TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 3.6A 830mW Sur... |
DataSheet: | SI6993DQ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI6993 |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 4.7A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI6993DQ-T1-GE3 is a type of Mosfet Array (MFA) component device, integrated with a pair of N-channel Logic Level Power Mosfets. It is a high density and low power component that provides performance in compact packages. The SI6993DQ-T1-GE3 is manufactured for use in various applications that require high switching speed and high reliability. This article will provide an overview of the SI6993DQ-T1-GE3 and discuss its application fields, as well as its working principle.
The SI6993DQ-T1-GE3 is constructed of two N-channel power Mosfets, one of which has a higher threshold voltage and the other having a lower one. This combination allows the Mosfets to work in parallel, allowing them to switch more quickly and with greater reliability. The two Mosfets can be operated in two different states, either as high-side or low-side switches. The high-side switch can be used to control higher power loads, while the low-side switch can be used to control smaller loads.
The most common application fields for the SI6993DQ-T1-GE3 include portable electronic devices such as phones, tablets and other mobile computing devices. They are also used in automotive applications for high-speed switching, such as for the windshield wipers and ignition. They can also be found in industrial applications such as high-speed motors and controllers. In addition, they can be found in home appliances and in industrial automated equipment.
The working principle of the SI6993DQ-T1-GE3 is based on the basic transistor principles. The voltage applied to the control gate of the component is used to control the output current in the Mosfet. The current can be switched on and off by simply changing the voltage at the control gate. When the voltage is high, the transistor switches on and allows current to flow; when the voltage is low, the transistor switches off and no current is allowed to pass.
The SI6993DQ-T1-GE3 has a variety of features that make it an ideal choice for many applications. It has a low on-resistance, which allows it to handle large peak loads and reduce power dissipation. It also has a high switching frequency, making it suitable for use in most applications. Furthermore, it is highly reliable, as it uses high-quality components and has a long lifetime.
In conclusion, the SI6993DQ-T1-GE3 provides an excellent mofset array solution for a variety of applications. With its low power consumption, high switching speed and high reliability, it is an ideal choice for applications that require quick switching and high reliability. It is also suitable for use in many industrial, automotive and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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SI6983DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.6A 8TS... |
SI6993DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 3.6A 8TS... |
SI6925ADQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.3A 8-T... |
SI6928DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 4A 8-TSS... |
SI6963BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.4A 8-T... |
SI6975DQ-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6975DQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4.3A 8TS... |
SI6924AEDQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 28V 4.1A 8-T... |
SI6981DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.1A 8-T... |
SI6993DQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 3.6A 8-T... |
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SI6933DQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8-TSSOPM... |
SI6943BDQ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 2.3A 8TS... |
SI6955ADQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6955ADQ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 2.5A 8-T... |
SI6966DQ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A 8TSSO... |
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SI6966EDQ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 8TSSOPMo... |
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