SI6993DQ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI6993DQ-T1-GE3TR-ND

Manufacturer Part#:

SI6993DQ-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 30V 3.6A 8-TSSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 3.6A 830mW Sur...
DataSheet: SI6993DQ-T1-GE3 datasheetSI6993DQ-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI6993
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI6993DQ-T1-GE3 is a type of Mosfet Array (MFA) component device, integrated with a pair of N-channel Logic Level Power Mosfets. It is a high density and low power component that provides performance in compact packages. The SI6993DQ-T1-GE3 is manufactured for use in various applications that require high switching speed and high reliability. This article will provide an overview of the SI6993DQ-T1-GE3 and discuss its application fields, as well as its working principle.

The SI6993DQ-T1-GE3 is constructed of two N-channel power Mosfets, one of which has a higher threshold voltage and the other having a lower one. This combination allows the Mosfets to work in parallel, allowing them to switch more quickly and with greater reliability. The two Mosfets can be operated in two different states, either as high-side or low-side switches. The high-side switch can be used to control higher power loads, while the low-side switch can be used to control smaller loads.

The most common application fields for the SI6993DQ-T1-GE3 include portable electronic devices such as phones, tablets and other mobile computing devices. They are also used in automotive applications for high-speed switching, such as for the windshield wipers and ignition. They can also be found in industrial applications such as high-speed motors and controllers. In addition, they can be found in home appliances and in industrial automated equipment.

The working principle of the SI6993DQ-T1-GE3 is based on the basic transistor principles. The voltage applied to the control gate of the component is used to control the output current in the Mosfet. The current can be switched on and off by simply changing the voltage at the control gate. When the voltage is high, the transistor switches on and allows current to flow; when the voltage is low, the transistor switches off and no current is allowed to pass.

The SI6993DQ-T1-GE3 has a variety of features that make it an ideal choice for many applications. It has a low on-resistance, which allows it to handle large peak loads and reduce power dissipation. It also has a high switching frequency, making it suitable for use in most applications. Furthermore, it is highly reliable, as it uses high-quality components and has a long lifetime.

In conclusion, the SI6993DQ-T1-GE3 provides an excellent mofset array solution for a variety of applications. With its low power consumption, high switching speed and high reliability, it is an ideal choice for applications that require quick switching and high reliability. It is also suitable for use in many industrial, automotive and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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