SI6966EDQ-T1-GE3

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The SI6966EDQ-T1-GE3 is a high voltage product of a transistor type known as an Array. Array transistors are composed of three independent P-Channel devices, each of which is composed of three terminals – source, drain and gate. Arrays allow for the control of higher voltage than the standard NMOS transistor, making them useful for many high-power applications including switching, power scaling, and power factor correction (PFC).

The SI6966EDQ-T1-GE3 is specially designed for high-current, high-voltage applications. It has a primary breakdown rating of -20V and a 50A continuous current rating. It also features a low intrinsic gate resistance of 8ohm. This makes it well-suited for applications where high current, stable voltage, and a small amount of power dissipation are key requirements.

The SI6966EDQ-T1-GE3 belongs to a class of devices known as Avalanche Rated Array. This technology enables the device to take advantage of avalanche effects to break down the higher voltages safely and with minimal power loss.

To further increase the reliability and safety of the device, the SI6966EDQ-T1-GE3 features an integrated overvoltage protection circuit. This circuit operates to reduce the drain-source voltage to a safe limit in the event of an overvoltage situation.

Another interesting feature of the SI6966EDQ-T1-GE3 is its integrated sense transistor. This transistor is designed to sense the drain-source voltage. The sensing circuit can then be used to detect any event that leads to a sudden over-voltage, such as a short circuit, and shut off the device in time to prevent any damage.

In summary, the SI6966EDQ-T1-GE3 is a highly capable and reliable Array transistor. Its high voltage, high current, and low resistance ratings make it ideal for high power applications such as switching and power correction. Its integrated overvoltage protection circuit and sense transistor offer additional safety features for peace of mind.

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