SI6969BDQ-T1-E3

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SI6969BDQ-T1-E3 is a low on resistance N-Channel enhancement mode power Mosfet with a 3.3V gate drive, designed for applications that require high efficiency and low power consumption. It comes in a surface mount SOT-23 package and its extended temperature range (-55⁰ to +150⁰C). The device is ideal for use in low voltage (1.2V) applications such as 5V logic supply conversion and switching load power regulation systems.

Applications

SI6969BDQ-T1-E3 is suitable for wide range of applications, including:

• 5V logic supply conversion
• Data line and bus termination
• DC/DC power conversion
• LCD backlight control
• Switch mode power supplies (SMPS)
• Battery management systems
• Switch load power regulation systems

Features

• Very low on-resistance (Rds(on), typ. 15mΩ)
• 3.3 V Gate drive
• High efficiency currents to 1.5A
• SOT-23 package
• Cascode on-state structure for fast switching
• Low input capacitance
• Low gate charge

Working Principle

The SI6969BDQ-T1-E3 is a power Mosfet that operates based on the principle of electrical conductivity. The SI6969BDQ-T1-E3 is a three-terminal device; the source, the drain, and the gate terminal. When a voltage signal is applied to the gate terminal, the device will become electrically conductive; the electric current will flow from the source terminal to the drain terminal. By controlling the gate signal, the current can be made to flow or stopped.

The SI6969BDQ-T1-E3 is a N-Channel power Mosfet. This device is operated by applying a voltage signal to the gate terminal; when the voltage signal applied to the gate terminal is higher than a certain value (threshold voltage), the device is considered to be "on" and the current between the source and drain terminals can flow. This device uses an extended temperature range, from -55°C to 150°C, allowing for a wide variety of applications.

The SI6969BDQ-T1-E3 features a cascode on-state structure for fast switching. This design reduces the device’s switching time, increasing the device’s efficiency. Low on-resistance and low input capacitance are additional features that ensure more efficient operation. The device also has a low gate charge, which reduces switching losses, enhancing the device’s efficiency while minimizing the amount of heat produced.

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